English   español  
Please use this identifier to cite or link to this item: http://hdl.handle.net/10261/209056
Share/Impact:
Statistics
logo share SHARE   Add this article to your Mendeley library MendeleyBASE

Visualizar otros formatos: MARC | Dublin Core | RDF | ORE | MODS | METS | DIDL
Exportar a otros formatos:

Title

Defects in nano-imprint lithography line patterns: Computational modelling and measurement accuracy

AuthorsConstantoudis, Vassilios; Whitworth, Guy L.; Kehagias, N. ; Papavieros, George; Sotomayor Torres, C. M. ; Gogolides, Evangelos
Issue Date2019
PublisherSPIE digital library
CitationProceedings of SPIE 10958 109581K (2019)
AbstractNIL patterns frequently suffer from the presence of defects such as missing lines or dots which degrade their properties and functionality. Due to their low density and nanosize, the measurement of their fraction is challenging nanometrology trade-off between resolution and measurement range. In this paper, we focus on the use of range-limited SEM images and explore the benefits of a computational modeling approach to simulate the measurement process and estimate the statistics and accuracy of the measurement of missing lines in patterns. The main questions we address have to do with the choice of the parameters available in the measurement process such as the number of acquired images, their magnification defining the lines included in images and the position (overlapped or not) at line pattern. The missing lines can have both uncorrelated and correlated positions in pattern. In the case of positive correlations, the defects are aggregated whereas in the opposite case of negative correlations they are arranged in periodic-like positions. We found that for uncorrelated defects, the critical parameter is the total number of lines included in the measurement process while the image position do not have any impact on the measurement accuracy. On the contrary, when correlations in defect positions are considered, the number of images and the number of lines per image differentiate their effects on the accuracy of the result while the arrangement of images along pattern also plays a crucial role in the measurement process.
DescriptionTrabajo presentado a Novel Patterning Technologies for Semiconductors, MEMS/NEMS and MOEMS Conference, celebrada en San Jose, California (USA) del 25 al 28 de febrero de 2019.
Publisher version (URL)https://doi.org/10.1117/12.2523931
URIhttp://hdl.handle.net/10261/209056
DOI10.1117/12.2523931
ISSN0277-786X
E-ISSN1996-756X
Appears in Collections:(CIN2) Artículos
Files in This Item:
File Description SizeFormat 
defectaccura.pdf957,49 kBAdobe PDFThumbnail
View/Open
Show full item record
Review this work
 


WARNING: Items in Digital.CSIC are protected by copyright, with all rights reserved, unless otherwise indicated.