Por favor, use este identificador para citar o enlazar a este item:
http://hdl.handle.net/10261/209056
COMPARTIR / EXPORTAR:
SHARE BASE | |
Visualizar otros formatos: MARC | Dublin Core | RDF | ORE | MODS | METS | DIDL | DATACITE | |
Título: | Defects in nano-imprint lithography line patterns: Computational modelling and measurement accuracy |
Autor: | Constantoudis, Vassilios; Whitworth, Guy L. CSIC ORCID; Kehagias, N. CSIC ORCID; Papavieros, George; Sotomayor Torres, C. M. CSIC ORCID; Gogolides, Evangelos | Fecha de publicación: | 2019 | Editor: | SPIE digital library | Citación: | Proceedings of SPIE 10958 109581K (2019) | Resumen: | NIL patterns frequently suffer from the presence of defects such as missing lines or dots which degrade their properties and functionality. Due to their low density and nanosize, the measurement of their fraction is challenging nanometrology trade-off between resolution and measurement range. In this paper, we focus on the use of range-limited SEM images and explore the benefits of a computational modeling approach to simulate the measurement process and estimate the statistics and accuracy of the measurement of missing lines in patterns. The main questions we address have to do with the choice of the parameters available in the measurement process such as the number of acquired images, their magnification defining the lines included in images and the position (overlapped or not) at line pattern. The missing lines can have both uncorrelated and correlated positions in pattern. In the case of positive correlations, the defects are aggregated whereas in the opposite case of negative correlations they are arranged in periodic-like positions. We found that for uncorrelated defects, the critical parameter is the total number of lines included in the measurement process while the image position do not have any impact on the measurement accuracy. On the contrary, when correlations in defect positions are considered, the number of images and the number of lines per image differentiate their effects on the accuracy of the result while the arrangement of images along pattern also plays a crucial role in the measurement process. | Descripción: | Trabajo presentado a Novel Patterning Technologies for Semiconductors, MEMS/NEMS and MOEMS Conference, celebrada en San Jose, California (USA) del 25 al 28 de febrero de 2019. | Versión del editor: | https://doi.org/10.1117/12.2523931 | URI: | http://hdl.handle.net/10261/209056 | DOI: | 10.1117/12.2523931 | ISSN: | 0277-786X | E-ISSN: | 1996-756X |
Aparece en las colecciones: | (CIN2) Artículos |
Ficheros en este ítem:
Fichero | Descripción | Tamaño | Formato | |
---|---|---|---|---|
defectaccura.pdf | 957,49 kB | Adobe PDF | Visualizar/Abrir |
CORE Recommender
Page view(s)
144
checked on 24-abr-2024
Download(s)
166
checked on 24-abr-2024
Google ScholarTM
Check
Altmetric
Altmetric
NOTA: Los ítems de Digital.CSIC están protegidos por copyright, con todos los derechos reservados, a menos que se indique lo contrario.