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Title

Comparative characterization of selective-area growth and vapourliquid- solid III-V semiconductor-superconductor nanowire networks for topological quantum computing

AuthorsBotifoll, Marc; Martí-Sànchez, Sara ; Yücelen, E.; Caroff, Philippe; Arbiol, Jordi
KeywordsInSb-Al heterojunction
Nanowire networks
Selective-area growth (SAG)
Strain
Issue Date2019
CitationMicroscopy at the Frontiers of Science Congress (2019)
AbstractThe fabrication of reproducible and defect-free nanowire networks with a semiconductor-superconductor heterojunction is a crucial step that needs to be achieved to generate stable enough Majorana states for topological quantum computing. Current approaches involve direct vertical growth of the nanowires by vapour-liquidsolid (VLS), which are arranged in networks due to the growth on tilted surfaces and their coincidence during the growth process, forming only a limited number of interconnections. However, this process has obvious limitations in terms of planar integration and manipulation of the individual nanowires. On the other hand, in order to overcome the practical limitations of this method, alternative horizontal (on-plane) growth processes have arisen in the last few years, being guided growth (GG) and selective-area growth (SAG) the most promising ones. On this basis, SAG by means of molecular beam epitaxy (MBE) is being widely studied for the growth of III-V semiconductors, mainly InAs and InSb, in perfect epitaxy with the superconducting metallic layer that is typically formed by aluminium. Therefore, a detailed characterization of the interface between InSb and Al in SAG nanowire networks, as well as VLS ones, is presented and compared, in order to shine light on the strain mechanisms involved in their growth mechanisms and their origin in terms of growth methods.
DescriptionResumen del póster presentado al Microscopy at the Frontiers of Science Congress Series (MFS), celebrado en el Parque de las Ciencias de Granada (España) del 11 al 13 de septiembre de 2019.
URIhttp://hdl.handle.net/10261/209055
Appears in Collections:(CIN2) Comunicaciones congresos
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