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dc.contributor.authorTamayo de Miguel, Francisco Javier-
dc.contributor.authorGonzález Sotos, Luisa-
dc.contributor.authorGonzález Díez, Yolanda-
dc.contributor.authorGarcía García, Ricardo-
dc.date.accessioned2010-02-10T11:17:02Z-
dc.date.available2010-02-10T11:17:02Z-
dc.date.issued1996-04-15-
dc.identifier.citationApplied Physics Letters 68(16): 2297 (1996)en_US
dc.identifier.issn0003-6951-
dc.identifier.urihttp://hdl.handle.net/10261/20902-
dc.description3 pages, 2 figures.en_US
dc.description.abstractTopographic and chemical mapping of materials at high resolution define the goals of a microscope. Force microscopy can provide methods for simultaneous topography and chemical characterization of materials. Here we describe the use of the atomic force microscope to map chemical variations of semiconductor samples. Chemical maps of semiconductor InP/InGaAs alloys have been determined with 3 nm spatial resolution while 10% changes in indium composition are resolved in InxGa1 – xAs structures. The present resolution is limited by the tip's curvature radius, cantilever lateral force constant, and the total applied force. Theoretical calculations predict lateral compositional resolutions of about 1 nm.en_US
dc.description.sponsorshipThis work has been supported by Dirección General de Investigación Científica y Técnica of Spain (PB94-0016).en_US
dc.format.extent263672 bytes-
dc.format.mimetypeapplication/pdf-
dc.language.isoengen_US
dc.publisherAmerican Institute of Physicsen_US
dc.rightsopenAccessen_US
dc.titleCompositional mapping of semiconductor structures by friction force microscopyen_US
dc.typeartículoen_US
dc.identifier.doi10.1063/1.116169-
dc.description.peerreviewedPeer revieweden_US
dc.relation.publisherversionhttp://dx.doi.org/10.1063/1.116169en_US
Appears in Collections:(IMN-CNM) Artículos
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