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Title

Structure and electronic properties of h-BN on curved crystals

AuthorsSchiller, Frederik ; Ali, K.; Makarova, A. A.; Laubschat, Clemens; Usachov, Dmitry Yu; Vyalikh, Denis V.; Ortega, J. Enrique ; Fernandez, Laura
Issue Date30-Sep-2019
Citation20th Trends in Nanotechnology International Conference (2019)
AbstractThe structural and electronic properties of hexagonal boron nitride (h-BN) grown on stepped Ni and Rh surfaces are systematically investigated using cylindrical Ni and Rh crystals as a tunable substrate. Our experiments reveal homogeneous h-BN monolayer coating of the entire curved surface, which in undergoes an overall faceting on Ni with large facets but h-BN nanoribbon growth on Rh. The faceted system on Ni is defined by step-free h-BN/Ni(1 1 1) terraces alternating with strongly tilted h-BN/Ni(1 1 5) or h-BN/Ni(1 1 0) nanostripes, depending on whether we have A-type or B-type vicinal surfaces, respectively. Such deep substrate self-organization is explained by both the rigidity of the h-BN lattice and the lack of registry with Ni crystal planes in the vicinity of the (1 1 1) surface. The analysis of the electronic properties by photoemission and absorption spectroscopies reveal a weaker h-BN/Ni interaction in (1 1 0)- and (1 1 5)-oriented facets, as well as an upward shift of the valence band with respect to the band position at the h-BN/Ni(1 1 1) terrace [1]. h-BN growth on stepped Rh leads to a transformation of the two-dimensional “nanomesh” structure [2] characterized by hole and wire areas to a formation of h-BN nanoribbons where the width of the nanoribbon is tunable by the substrate vicinal angle. We find faceting of the substrate into (1 1 2) and (1 1 3) surfaces, where interaction with the Rh substrate increases (contrary to Ni). Furthermore h-BN band gap openings due to the limited nanoribbon width are observed.
DescriptionTrabajo presentado en 20th Trends in Nanotechnology International Conference (2019), celebrada en San Sebastián (España), del 30 de septiembre al 4 de octubre de 2019
Publisher version (URL)http://www.tntconf.org/2019/TNT2019_abstractsbook.pdf
URIhttp://hdl.handle.net/10261/207775
Appears in Collections:(CFM) Comunicaciones congresos
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