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Por favor, use este identificador para citar o enlazar a este item: http://hdl.handle.net/10261/20680
Título

Effect of doping method on microstructural and defect profile of Sb–BaTiO3

AutorBrzozowski, E. B.; Caballero Cuesta, Amador; Villegas, Marina; Castro, Miriam Susana; Fernández Lozano, José Francisco
Palabras claveGrain growth
Defects
Fecha de publicación2006
EditorElsevier
CitaciónJournal of the European Ceramic Society 26 (2006) 2327–2336
ResumenElectrical properties in BaTiO3 based ceramics are strongly dependent on composition and microstructural development. In this work, we studied the effect of the particle coating as doping method on microstructure and electrical properties of Sb-doped BaTiO3. The advanced doping method involved surface-coated BaTiO3 particles with a thin film of a metal-organic precursor solution. Results were compared with the performance obtained on conventional doping method. The particle coating as doping method led to an effective grain growth inhibition as well as significant microstructure improvement. The incorporation of dopant into the perovskite lattice is influenced by the doping method. Results suggested that Sb acted as donor dopant on A or/and B sites, and also as acceptor on B sites, modifying the grain boundaries structure characteristics. Dopant incorporation method affected the defect structure, and therefore, the donor dopant concentration for the semiconductor insulator transition in BaTiO3 ceramics.
Versión del editorhttp://dx.doi.org/doi:10.1016/j.jeurceramsoc.2005.04.017
URIhttp://hdl.handle.net/10261/20680
DOI10.1016/j.jeurceramsoc.2005.04.017
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