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dc.contributor.authorJahangirli, Zakir A.-
dc.contributor.authorAlizade, Elvin H.-
dc.contributor.authorAliev, Ziya S.-
dc.contributor.authorOtrokov, M. M.-
dc.contributor.authorIsmayilova, Narmin A.-
dc.contributor.authorMammadov, Samir N.-
dc.contributor.authorAmiraslanov, I. R.-
dc.contributor.authorMamedov, Nazim T.-
dc.contributor.authorOrudjev, Guseyn-
dc.contributor.authorBabanly, M. B.-
dc.contributor.authorShikin, Alexander M.-
dc.contributor.authorChulkov, Eugene V.-
dc.date.accessioned2020-03-10T13:57:43Z-
dc.date.available2020-03-10T13:57:43Z-
dc.date.issued2019-11-
dc.identifierdoi: 10.1116/1.5122702-
dc.identifiere-issn: 2166-2754-
dc.identifierissn: 2166-2746-
dc.identifier.citationJournal of Vacuum Science and Technology B:Nanotechnology and Microelectronics 37(6): 062910 (2019)-
dc.identifier.urihttp://hdl.handle.net/10261/203466-
dc.description.abstractA comparative study of the electronic and optical properties of Mn-Bi-Te layered compounds was carried out using spectroscopic ellipsometry (SE) over a photon energy range of 0.7-6.5 eV at room temperature and density functional theory (DFT)-based first-principle calculations within the general gradient approximation with Hubbard like correction (GGA+U) and allowance for a spin-orbital coupling. The total energies of the above compounds in ferromagnetic (FM) and antiferromagnetic (AFM) spin configurations are obtained by taking the long-range van der Waals interaction into account. The stability of the AFM state of MnBiTe and MnBiTe over the corresponding FM counterpart is disclosed. The SE-based and calculated dielectric functions are compared. It is shown that interband optical transitions in the accessed photon energy range mainly occur between Mn 3d + Te 5p states of the valence band and Bi 6p + Te 5p with a small admixture of Mn 3d states of the conduction band.-
dc.description.sponsorshipWe acknowledge the support by the Science Development Foundation under the President of the Republic of Azerbaijan (Grant No. EI F-BGM-4-RFTF1/2017-21/04/1-M-02), Russian Foundation for Basic Research (Grant No. 18-52-06009), the Basque Departamento de Educación, UPV/EHU (Grant No. IT-756-13), Spanish Ministerio de Economia y Competitividad (MINECO Grant No. FIS2016-75862-P), the Saint Petersburg State University grant for scientific investigations (Grant No.15.61.202.2015). M.M.O. acknowledges support by the Diputación Foral de Gipuzkoa (SAREA 2018 - RED 2018*, *Project No. 2018-CIEN-000025-01).-
dc.languageeng-
dc.relationinfo:eu-repo/grantAgreement/MINECO/Plan Estatal de Investigación Científica y Técnica y de Innovación 2013-2016/FIS2016-75862-P-
dc.rightsclosedAccess-
dc.titleElectronic structure and dielectric function of Mn-Bi-Te layered compounds-
dc.typeartículo-
dc.identifier.doi10.1116/1.5122702-
dc.relation.publisherversionhttp://dx.doi.org/10.1116/1.5122702-
dc.date.updated2020-03-10T13:57:43Z-
dc.contributor.funderScience Development Foundation under the President of the Republic of Azerbaijan-
dc.contributor.funderRussian Foundation for Basic Research-
dc.contributor.funderEusko Jaurlaritza-
dc.contributor.funderMinisterio de Economía y Competitividad (España)-
dc.contributor.funderSaint Petersburg State University-
dc.contributor.funderDiputación Foral de Gipuzkoa-
dc.relation.csic-
dc.identifier.funderhttp://dx.doi.org/10.13039/501100004285es_ES
dc.identifier.funderhttp://dx.doi.org/10.13039/501100002261es_ES
dc.identifier.funderhttp://dx.doi.org/10.13039/501100003086es_ES
dc.identifier.funderhttp://dx.doi.org/10.13039/501100003329es_ES
dc.type.coarhttp://purl.org/coar/resource_type/c_6501es_ES
item.openairetypeartículo-
item.grantfulltextnone-
item.cerifentitytypePublications-
item.openairecristypehttp://purl.org/coar/resource_type/c_18cf-
item.fulltextNo Fulltext-
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