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dc.contributor.authorGonzalez Rosillo, Juan Carloses_ES
dc.contributor.authorOrtega Hernandez, Rafaeles_ES
dc.contributor.authorArnd, Benediktes_ES
dc.contributor.authorColl, Marionaes_ES
dc.contributor.authorDittmann, Reginaes_ES
dc.contributor.authorObradors, Xavieres_ES
dc.contributor.authorPalau, Annaes_ES
dc.contributor.authorSuñe, Jordies_ES
dc.contributor.authorPuig Molina, Teresaes_ES
dc.date.accessioned2020-03-06T14:28:53Z-
dc.date.available2020-03-06T14:28:53Z-
dc.date.issued2019-09-
dc.identifier.urihttp://hdl.handle.net/10261/203102-
dc.relationMINECO/ICTI2013-2016/SEV-2015-0496es_ES
dc.relationMINECO/ICTI2013-2016/MAT2015-68994-REDCes_ES
dc.relationMINECO/ICTI2013-2016/MAT2014-56063-C2-1-Res_ES
dc.relation.isversionofPostprintes_ES
dc.rightsopenAccessen_EN
dc.titleEngineering Oxygen Migration for Homogeneous Volume Resistive Switching in 3-Terminal Deviceses_ES
dc.typeartículoes_ES
dc.description.peerreviewedPeer reviewedes_ES
dc.relation.publisherversionhttp://dx.doi.org/10.1002/aelm.201800629es_ES
dc.embargo.terms2020-09-30es_ES
dc.relation.csicSíes_ES
oprm.item.hasRevisionno ko 0 false*
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