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A New Three-Dimensional Subsulfide Ir2In8S with Dirac Semimetal Behavior

AuthorsKhoury, Jason F.; Rettie, Alexander J. E.; Khan, Mojammel A.; Ghimire, Nirmal J.; Robredo, Iñigo; Pfluger, Jonathan E.; Pal, Koushik P; Wolverton, Chris; Bergara, Aitor ; Jiang, J. S.; Schoop, Leslie M.; Vergniory, M.; Mitchell, J. F.; Chung, Duck Young; Kanatzidis, Mercouri G.
Issue Date4-Dec-2019
PublisherAmerican Chemical Society
CitationJournal of the American Chemical Society 141(48): 19130-19137 (2019)
AbstractDirac and Weyl semimetals host exotic quasiparticles with unconventional transport properties, such as high magnetoresistance and carrier mobility. Recent years have witnessed a huge number of newly predicted topological semimetals from existing databases; however, experimental verification often lags behind such predictions. Common reasons are synthetic difficulties or the stability of predicted phases. Here, we report the synthesis of the type-II Dirac semimetal IrInS, an air-stable compound with a new structure type. This material has two Dirac crossings in its electronic structure along the &-Z direction of the Brillouin zone. We further show that IrInS has a high electron carrier mobility of ∼10 »000 cm/(V s) at 1.8 K and a large, nonsaturating transverse magnetoresistance of ∼6000% at 3.34 K in a 14 T applied field. Shubnikov de-Haas oscillations reveal several small Fermi pockets and the possibility of a nontrivial Berry phase. With its facile crystal growth, novel structure type, and striking electronic structure, IrInS introduces a new material system to study topological semimetals and enable advances in the field of topological materials.
Publisher version (URL)http://dx.doi.org/10.1021/jacs.9b10147
Identifiersdoi: 10.1021/jacs.9b10147
e-issn: 1520-5126
issn: 0002-7863
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