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dc.contributor.authorLyu, Jikees_ES
dc.contributor.authorFina, Ignasies_ES
dc.contributor.authorBachelet, R.es_ES
dc.contributor.authorSaint-Girons, G.es_ES
dc.contributor.authorEstandía, Saúles_ES
dc.contributor.authorGázquez, Jaumees_ES
dc.contributor.authorFontcuberta, Josepes_ES
dc.contributor.authorSánchez Barrera, Florencioes_ES
dc.date.accessioned2020-03-04T09:21:41Z-
dc.date.available2020-03-04T09:21:41Z-
dc.date.issued2019-06-03-
dc.identifier.citationApplied Physics Letters 114 (22): 222901 (2019)es_ES
dc.identifier.issn0003-6951-
dc.identifier.urihttp://hdl.handle.net/10261/202659-
dc.description.abstractSrTiO3 templates have been used to integrate epitaxial bilayers of ferroelectric Hf0.5Zr0.5O2 and La2/3Sr1/3MnO3 bottom electrodes on Si(001). The Hf0.5Zr0.5O2 films show enhanced properties in comparison to equivalent films on SrTiO3(001) single crystalline substrates. The films, thinner than 10 nm, have a very high remnant polarization of 34 lC/cm2. Hf0.5Zr0.5O2 capacitors at an operating voltage of 4V present a long retention time well beyond 10 years and high endurance against fatigue up to 109 cycles. The robust ferroelectric properties displayed by the epitaxial Hf0.5Zr0.5O2 films on Si(001) using SrTiO3 templates pave the way for the monolithic integration on silicon of emerging memory devices based on epitaxial HfO2.es_ES
dc.description.sponsorshipFinancial support from the Spanish Ministry of Economy, Competitiveness and Universities, through the “Severo Ochoa” Programme for Centres of Excellence in R&D (No. SEV-2015-0496) and the MAT2017-85232-R (AEI/FEDER, EU) and MAT2015-73839-JIN projects and from Generalitat de Catalunya (2017 SGR 1377) is acknowledged. I.F. acknowledges Ramón y Cajal Contract No. RYC-2017-22531. J.L. is financially supported by the China Scholarship Council (CSC) with No. 201506080019. S.E. acknowledges the Spanish Ministry of Economy, Competitiveness and Universities for his Ph.D. Contract (No. SEV-2015-0496-16-3) and its cofunding by the ESF. The work of J.L. and S.E. has been done as a part of their Ph.D. program in Materials Science at Universitat Autònoma de Barcelona. INL authors acknowledge the financial support from the European Commission through the Project TIPS (No. H2020-ICT-02-2014-1-644453) and from the French national research agency (ANR) through the projects DIAMWAFEL (No. ANR-15-CE08-0034), LILIT (No. ANR-16-CE24-0022), and MITO (No. ANR-17-CE05-0018). They are also grateful to the joint laboratory INL-RIBER and P. Regreny, C. Botella, and J. B. Goure for the MBE technical support on the Nanolyon technological platform.es_ES
dc.language.isoenges_ES
dc.publisherAmerican Institute of Physicses_ES
dc.relationMINECO/ICTI2013-2016/SEV-2015-0496es_ES
dc.relationMICIU/ICTI2017-2021/MAT2017-85232-Res_ES
dc.relationMINECO/ICTI2013-2016/MAT2015-73839-JINes_ES
dc.relationinfo:eu-repo/grantAgreement/EC/H2020/644453es_ES
dc.relation.isversionofPublisher's versiones_ES
dc.rightsopenAccessen_EN
dc.subjectEpitaxyes_ES
dc.subjectMemory devicees_ES
dc.subjectTransition metal oxideses_ES
dc.subjectFerroelectricityes_ES
dc.subjectThin filmses_ES
dc.subjectElectrical properties and parameterses_ES
dc.subjectPerovskiteses_ES
dc.titleEnhanced ferroelectricity in epitaxial Hf0.5Zr0.5O2 thin films integrated with Si(001) using SrTiO3 templateses_ES
dc.typeartículoes_ES
dc.description.peerreviewedPeer reviewedes_ES
dc.relation.publisherversionhttp://dx.doi.org/10.1063/1.5096002es_ES
dc.embargo.terms2020-06-03es_ES
dc.contributor.funderMinisterio de Economía y Competitividad (España)es_ES
dc.contributor.funderGeneralitat de Catalunyaes_ES
dc.contributor.funderEuropean Commissiones_ES
dc.contributor.funderAgence Nationale de la Recherche (France)es_ES
dc.relation.csices_ES
oprm.item.hasRevisionno ko 0 false*
dc.identifier.funderhttp://dx.doi.org/10.13039/501100003329es_ES
dc.identifier.funderhttp://dx.doi.org/10.13039/501100001665es_ES
dc.identifier.funderhttp://dx.doi.org/10.13039/501100000780es_ES
dc.identifier.funderhttp://dx.doi.org/10.13039/501100002809es_ES
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