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Enhanced ferroelectricity in epitaxial Hf0.5Zr0.5O2 thin films integrated with Si(001) using SrTiO3 templates

AuthorsLyu, Jike; Fina, Ignasi ; Bachelet, R.; Saint-Girons, G.; Estandía, Saúl; Gázquez, Jaume ; Fontcuberta, Josep ; Sánchez Barrera, Florencio
Memory device
Transition metal oxides
Thin films
Electrical properties and parameters
Issue Date3-Jun-2019
PublisherAmerican Institute of Physics
CitationApplied Physics Letters 114 (22): 222901 (2019)
AbstractSrTiO3 templates have been used to integrate epitaxial bilayers of ferroelectric Hf0.5Zr0.5O2 and La2/3Sr1/3MnO3 bottom electrodes on Si(001). The Hf0.5Zr0.5O2 films show enhanced properties in comparison to equivalent films on SrTiO3(001) single crystalline substrates. The films, thinner than 10 nm, have a very high remnant polarization of 34 lC/cm2. Hf0.5Zr0.5O2 capacitors at an operating voltage of 4V present a long retention time well beyond 10 years and high endurance against fatigue up to 109 cycles. The robust ferroelectric properties displayed by the epitaxial Hf0.5Zr0.5O2 films on Si(001) using SrTiO3 templates pave the way for the monolithic integration on silicon of emerging memory devices based on epitaxial HfO2.
Publisher version (URL)http://dx.doi.org/10.1063/1.5096002
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