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A Robust and Automated Methodology for the Analysis of Time-Dependent Variability at Transistor Level

AuthorsSaraza-Canflanca, P.; Díaz-Fortuny, J.; Castro-López, R. ; Roca, Elisenda ; Martín-Martínez, J.; Rodríguez, R.; Nafria, M.; Fernández, Francisco V.
Issue Date2020
CitationIntegration - The VLSI Journal, 72 : 13-20 (2020)
AbstractIn the past few years, Time-Dependent Variability has become a subject of growing concern in CMOS technologies. In particular, phenomena such as Bias Temperature Instability, Hot-Carrier Injection and Random Telegraph Noise can largely affect circuit reliability. It becomes therefore imperative to develop reliability-aware design tools to mitigate their impact on circuits. To this end, these phenomena must be first accurately characterized and modeled. And, since all these phenomena reveal a stochastic nature for deeply-scaled integration technologies, they must be characterized massively on devices to extract the probability distribution functions associated to their characteristic parameters. In this work, a complete methodology to characterize these phenomena experimentally, and then extract the necessary parameters to construct a Time-Dependent Variability model, is presented. This model can be used by a reliability simulator.
Publisher version (URL)https://doi.org/10.1016/j.vlsi.2020.02.002
Appears in Collections:(IMSE-CNM) Artículos
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