Please use this identifier to cite or link to this item: http://hdl.handle.net/10261/20120
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Title

Phonons in Bx Ga1-x N/GaN epilayers studied by means of UV Raman scattering

AuthorsCuscó, Ramón CSIC ORCID ; Alarcón-Lladó, Esther CSIC; Ibáñez Insa, Jordi CSIC ORCID ; Artús, Lluís CSIC ORCID ; Gautier, S.; Ougazzaden, A.
Issue DateApr-2008
PublisherWiley-Blackwell
CitationPhysica Status Solidi - B - Basic Solid State Physics 245(4): 731-734 (2008)
AbstractWe present UV Raman scattering measurements on Bx Ga1-x N epilayers with boron composition up to 3.6%. The resonant enhancement of the longitudinal optical modes allows us to detect multiphonon scattering by A1(LO) modes. For low boron compositions (2%), both the E2 and the A1(LO) modes show a consistent frequency increase with boron composition due to alloying effects. Higher disorder and expansive strain are observed in alloys with higher boron content. (© 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
Publisher version (URL)http://www3.interscience.wiley.com/journal/117884977/abstract
URIhttp://hdl.handle.net/10261/20120
DOI10.1002/pssb.200743398
ISSN0370-1972
Appears in Collections:(Geo3Bcn) Artículos

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