English   español  
Por favor, use este identificador para citar o enlazar a este item: http://hdl.handle.net/10261/20118
Compartir / Impacto:
Estadísticas
Add this article to your Mendeley library MendeleyBASE
Citado 11 veces en Web of Knowledge®  |  Ver citas en Google académico
Visualizar otros formatos: MARC | Dublin Core | RDF | ORE | MODS | METS | DIDL
Título

Electron effective mass and mobility in heavily doped n-GaAsN probed by Raman scattering

AutorIbáñez Insa, Jordi ; Cuscó, Ramón ; Alarcón-Lladó, Esther ; Artús, Lluís ; Patanè, A.; Fowler, D.; Eaves, L.; Uesugi, K.; Suemune, I.
Fecha de publicaciónago-2008
EditorAmerican Institute of Physics
CitaciónJournal of Applied Physics 103(10): 103528 (2008)
ResumenWe investigate inelastic light scattering by longitudinal optic phonon-plasmon coupled modes LOPCMs in a series of heavily Se-doped, n-type GaAs1−xNx epilayers with x 0.4%. We perform a line shape analysis of the LOPCM spectra to estimate the optical effective mass, mopt , and the scattering time of the conduction electrons in GaAsN. We use these results to evaluate an effective carrier mobility for our samples. The values thus obtained, which we compare with measured electron Hall mobilities, indicate that the x-dependence of the mobility in GaAs1−xNx is dominated by the scattering time, rather than by the variation of the electron effective mass. The Raman analysis yields mopt values that are lower than those obtained from the band anticrossing model. © 2008 American Institute of Physics.
Versión del editorhttp://scitation.aip.org/getabs/servlet/GetabsServlet?prog=normal&id=JAPIAU000103000010103528000001&idtype=cvips&gifs=yes
URIhttp://hdl.handle.net/10261/20118
DOI10.1063/1.2927387
ISSN0021-8979
Aparece en las colecciones: (ICTJA) Artículos
Ficheros en este ítem:
Fichero Descripción Tamaño Formato  
JApplPhys_103_103528.pdf261,91 kBAdobe PDFVista previa
Visualizar/Abrir
Mostrar el registro completo
 



NOTA: Los ítems de Digital.CSIC están protegidos por copyright, con todos los derechos reservados, a menos que se indique lo contrario.