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Título: | Spin communication over 30 µm long channels of chemical vapor deposited graphene on SiO2 |
Autor: | Gebeyehu, Zewdu M. CSIC; Parui, S.; Sierra, Juan F. CSIC ORCID; Timmermans, Matias CSIC ORCID; Esplandiú, María J. CSIC ORCID; Brems, S.; Huyghebaert, C.; Garello, Kevin CSIC ORCID; Costache, Marius V. CSIC ORCID; Valenzuela, Sergio O. CSIC ORCID | Palabras clave: | Graphene Spintronics Spin devices |
Fecha de publicación: | 2019 | Editor: | IOP Publishing | Citación: | 2D Materials 6: 034003 (2019) | Resumen: | We demonstrate a high-yield fabrication of non-local spin valve devices with room-temperature spin lifetimes of up to 3 ns and spin relaxation lengths as long as 9 µm in platinum-based chemical vapor deposition (Pt-CVD) synthesized single-layer graphene on SiO2/Si substrates. The spin-lifetime systematically presents a marked minimum at the charge neutrality point, as typically observed in pristine exfoliated graphene. However, by studying the carrier density dependence beyond n ~ 5 × 1012 cm−2, via electrostatic gating, it is found that the spin lifetime reaches a maximum and then starts decreasing, a behavior that is reminiscent of that predicted when the spin-relaxation is driven by spin–orbit interaction. The spin lifetimes and relaxation lengths compare well with state-of-the-art results using exfoliated graphene on SiO2/Si, being a factor two-to-three larger than the best values reported at room temperature using the same substrate. As a result, the spin signal can be readily measured across 30 µm long graphene channels. These observations indicate that Pt-CVD graphene is a promising material for large-scale spin-based logic-in-memory applications. | Versión del editor: | https://doi.org/10.1088/2053-1583/ab1874 | URI: | http://hdl.handle.net/10261/201036 | DOI: | 10.1088/2053-1583/ab1874 | E-ISSN: | 2053-1583 |
Aparece en las colecciones: | (CIN2) Artículos |
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