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dc.contributor.authorStankiewicz, Jolanta-
dc.contributor.authorJiménez-Villacorta, Félix-
dc.contributor.authorPrieto, C.-
dc.date.accessioned2009-12-10T12:03:29Z-
dc.date.available2009-12-10T12:03:29Z-
dc.date.issued2006-01-
dc.identifier.citationPhysical Review - Section B - Condensed Matter 73(1): 014429.1-014429.6 (2006)en_US
dc.identifier.issn1098-0121-
dc.identifier.urihttp://hdl.handle.net/10261/19467-
dc.description6 pages, 7 figures, 1 table.-- PACS number(s): 75.70.Ak, 73.50.Jt, 73.61.Aten_US
dc.description.abstractWe report results of electrical resistivity, Hall effect, and anisotropic magnetoresistance (AMR) measurements performed on thin films (~80 nm) of naturally oxidized iron in the 5 to 300 K temperature range, and in magnetic fields up to 5 T. The films were grown at low temperatures. We find that the resistivity, coercive field, as well as the magnetoresistance of the films are affected by growth conditions, particularly by the substrate temperature which controls the size and shape of crystalline grains. We used AMR as a probe for magnetization reversal studies in our films. We find that the coercive fields vary as as in systems of weakly interacting ensembles of magnetic nanoparticles even though dipole-dipole interactions may well play a significant role.en_US
dc.description.sponsorshipWe acknowledge support from Ministerio de Ciencia y Tecnología of Spain through Grants No. MAT02/166 and MAT2003/01880.en_US
dc.format.extent259768 bytes-
dc.format.mimetypeapplication/pdf-
dc.language.isoengen_US
dc.publisherAmerican Physical Societyen_US
dc.rightsopenAccessen_US
dc.subjectFerromagnetic materialsen_US
dc.subjectMagnetic thin filmsen_US
dc.subjectHall effecten_US
dc.subjectMagnetoresistanceen_US
dc.subjectNanoparticlesen_US
dc.subjectMagnetic particlesen_US
dc.subjectCoercive forceen_US
dc.subjectIron compoundsen_US
dc.titleMagnetotransport properties of oxidized iron thin filmsen_US
dc.typeartículoen_US
dc.identifier.doi10.1103/PhysRevB.73.014429-
dc.description.peerreviewedPeer revieweden_US
dc.relation.publisherversionhttp://dx.doi.org/10.1103/PhysRevB.73.014429en_US
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