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Mechanism of GaN quantum dots capped with AlN: An AFM, electron microscopy, and x-ray anomalous diffraction study

AutorCoraux, J.; Amstatt, B.; Budagoski, J. A.; Bellet-Amalric, E.; Rouvière, Jean-Luc; Favre-Nicolin, V.; Proietti, M. G.; Renevier, H.; Daudin, B.
Fecha de publicación2-nov-2006
EditorAmerican Physical Society
CitaciónPhysical Review B 74: 195302 (2006)
ResumenCapping of GaN quantum dots with AlN has been studied at the monolayer scale by combining atomic force microscopy, high resolution electron microscopy, and grazing incidence x-ray anomalous diffraction. Consistent with the results provided by these three techniques, it has been demonstrated that, following a wetting of the dots by an AlN layer up to 4 ML coverage, subsequent capping is dominated by a preferential AlN growth in between the dots, eventually resulting in a complete smoothing of AlN. Interdiffusion has been shown to be negligible during this process, which makes the GaN/AlN system unique among semiconductors.
Versión del editorhttp://dx.doi.org/10.1103/PhysRevB.74.195302
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