English   español  
Please use this identifier to cite or link to this item: http://hdl.handle.net/10261/19307
Share/Impact:
Statistics
logo share SHARE logo core CORE   Add this article to your Mendeley library MendeleyBASE

Visualizar otros formatos: MARC | Dublin Core | RDF | ORE | MODS | METS | DIDL
Exportar a otros formatos:
Title

A raman study of order-disorder phenomena in Zn1−x Mnx Ga2 Se4 compounds

AuthorsAlonso-Gutiérrez, P.; Sanjuán, M. L.; Morón, M. Carmen
Issue DateApr-2007
PublisherAmerican Institute of Physics
CitationAIP Conference Proceedings 893(1): 185-186 (2007)
AbstractA Raman study of order-disorder phenomena in the diluted magnetic semiconductors Zn1−xMnxGa2Se4 series (0x1) is presented. The end compounds ZnGa2Se4 and MnGa2Se4 crystallize in the I2m and I space groups respectively, presenting either partial cation disorder (I2m) or total cation order (I). In this work, a relation between the shape of a mode at 180 cm−1 and the degree of cation order has been found. This band can be decomposed in a narrow and a broad component, related with the long range order and local non periodicity respectively. Cation ordering has been seen to increase after a heating treatment up to 600°C and further cooling to RT.
Description2 páginas, 4 figuras.-- Trabajo presentado a la 28th International Conference on the Physics of Semiconductors - ICPS 2006, celebrada en Viena (Austria) del 24 al 28 de julio.
Publisher version (URL)http://dx.doi.org/10.1063/1.2729831
URIhttp://hdl.handle.net/10261/19307
DOI10.1063/1.2729831
ISSN0094-243X
E-ISSN1551-7616
Appears in Collections:(ICMA) Artículos
Files in This Item:
File Description SizeFormat 
A Raman Study.pdf113,5 kBAdobe PDFThumbnail
View/Open
Show full item record
Review this work
 


WARNING: Items in Digital.CSIC are protected by copyright, with all rights reserved, unless otherwise indicated.