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Title

Atomic-scale structure of self-assembled In(Ga)As quantum rings in GaAs

AuthorsOffermans, P.; Koenraad, P. M.; Wolter, J. H.; Granados, Daniel ; García Martínez, Jorge Manuel ; Fomin, V. M.; Gladilin, V. N.; Devreese, J. T.
KeywordsSelf-assembly
Indium compounds
Gallium arsenide
Semiconductor quantum dots
III-V semiconductors
Annealing
Scanning tunnelling microscopy
Atomic force microscopy
Issue Date19-Sep-2005
PublisherAmerican Institute of Physics
CitationApplied Physics Letters. 87, 131902 (2005)
AbstractWe present an atomic-scale analysis of the indium distribution of self-assembled In(Ga)As quantum rings (QRs) which are formed from InAs quantum dots by capping with a thin layer of GaAs and subsequent annealing. We find that the size and shape of QRs as observed by cross-sectional scanning tunneling microscopy (X-STM) deviate substantially from the ring-shaped islands as observed by atomic force microscopy on the surface of uncapped QR structures. We show unambiguously that X-STM images the remaining quantum dot material whereas the AFM images the erupted quantum dot material. The remaining dot material shows an asymmetric indium-rich crater-like shape with a depression rather than an opening at the center and is responsible for the observed electronic properties of QR structures. These quantum craters have an indium concentration of about 55% and a diameter of about 20 nm which is consistent with the observed electronic radius of QR structures.
Publisher version (URL)http://link.aip.org/link/?APPLAB/87/131902/1
http://dx.doi.org/10.1063/1.2058212
URIhttp://hdl.handle.net/10261/19283
DOI10.1063/1.2058212
ISSN0003-6951
Appears in Collections:(IMN-CNM) Artículos
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