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Atomic-scale structure of self-assembled In(Ga)As quantum rings in GaAs

AutorOffermans, P.; Koenraad, P. M.; Wolter, J. H.; Granados, Daniel ; García Martínez, Jorge Manuel ; Fomin, V. M.; Gladilin, V. N.; Devreese, J. T.
Palabras claveSelf-assembly
Indium compounds
Gallium arsenide
Semiconductor quantum dots
III-V semiconductors
Scanning tunnelling microscopy
Atomic force microscopy
Fecha de publicación19-sep-2005
EditorAmerican Institute of Physics
CitaciónApplied Physics Letters. 87, 131902 (2005)
ResumenWe present an atomic-scale analysis of the indium distribution of self-assembled In(Ga)As quantum rings (QRs) which are formed from InAs quantum dots by capping with a thin layer of GaAs and subsequent annealing. We find that the size and shape of QRs as observed by cross-sectional scanning tunneling microscopy (X-STM) deviate substantially from the ring-shaped islands as observed by atomic force microscopy on the surface of uncapped QR structures. We show unambiguously that X-STM images the remaining quantum dot material whereas the AFM images the erupted quantum dot material. The remaining dot material shows an asymmetric indium-rich crater-like shape with a depression rather than an opening at the center and is responsible for the observed electronic properties of QR structures. These quantum craters have an indium concentration of about 55% and a diameter of about 20 nm which is consistent with the observed electronic radius of QR structures.
Versión del editorhttp://link.aip.org/link/?APPLAB/87/131902/1
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