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Vertical order in stacked layers of self-assembled In(Ga)As quantum rings on GaAs (001)

AutorGranados, Daniel ; García Martínez, Jorge Manuel ; Ben, Teresa; Molina, Sergio I.
Palabras claveGallium arsenide
Indium compounds
III-V semiconductors
Semiconductor quantum dots
Self-assembly
Photoluminescence
Surface morphology
Surface segregation
Internal stresses
Transmission electron microscopy
Atomic force microscopy
Fecha de publicación10-feb-2005
EditorAmerican Institute of Physics
CitaciónApplied Physics Letters 86, 071918 (2005)
ResumenStacked layers of self-assembled In(Ga)As quantum rings on GaAs grown by solid source molecular beam epitaxy are studied by ex situ atomic force microscopy (AFM), low temperature photoluminescence (PL) and cross-sectional transmission electron microscopy (XTEM). The influence of the strain field and InAs segregation on the surface morphology, optical properties and vertical ordering of three quantum ring layers is analyzed for GaAs spacers between layers from 1.5 to 14 nm. AFM and PL results show that samples with spacers >6 nm have surface morphology and optical properties similar to single layers samples. XTEM results on samples with 3 and 6 nm GaAs spacers show that the rings are preserved after capping with GaAs, and evidence the existence of vertically ordered quantum rings.
Versión del editorhttp://link.aip.org/link/?APPLAB/86/071918/1
http://dx.doi.org/10.1063/1.1866228
URIhttp://hdl.handle.net/10261/19236
DOI10.1063/1.1866228
ISSN0003-6951
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