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dc.contributor.authorHsu, Min-Hsiang Mark-
dc.contributor.authorThourhout, Dries van-
dc.contributor.authorPantouvaki, Marianna-
dc.contributor.authorMeersschaut, Johan-
dc.contributor.authorConard, Thierry-
dc.contributor.authorRichard, Olivier-
dc.contributor.authorBender, Hugo-
dc.contributor.authorFavia, Paola-
dc.contributor.authorVila, María-
dc.contributor.authorCid, Rosalia-
dc.contributor.authorRubio-Zuazo, J.-
dc.contributor.authorCastro, Germán R.-
dc.contributor.authorCampenhout, Joris van.-
dc.contributor.authorAbsil, Philippe-
dc.contributor.authorMerckling, Clement-
dc.date.accessioned2019-08-09T12:25:36Z-
dc.date.available2019-08-09T12:25:36Z-
dc.date.issued2017-05-16-
dc.identifier.citationApplied Physics Express 10(6): 065501 (2017)-
dc.identifier.issn1882-0778-
dc.identifier.urihttp://hdl.handle.net/10261/187988-
dc.description.abstractMonolithically integrating BaTiO on silicon substrates has attracted attention because of the wide spectrum of potential novel applications ranging from electronics to photonics. For optimal device performance, it is important to control the BaTiO domain orientation during thin film preparation. Here, we use molecular beam epitaxy to prepare crystalline BaTiO on Si(001) substrates using a SrTiO buffer layer. A systematic investigation is performed to understand how to control the BaTiO domain orientation through the thickness engineering of the SrTiO buffer layer and the BaTiO layer itself. This provides different possibilities for obtaining a given BaTiO orientation as desired for a specific device application.-
dc.publisherIOP Publishing-
dc.rightsclosedAccess-
dc.titleControlled orientation of molecular-beam-epitaxial BaTiO3 on Si(001) using thickness engineering of BaTiO3 and SrTiO3 buffer layers-
dc.typeartículo-
dc.identifier.doihttp://dx.doi.org/10.7567/APEX.10.065501-
dc.relation.publisherversionhttps://doi.org/10.7567/APEX.10.065501-
dc.identifier.e-issn1882-0786-
dc.date.updated2019-08-09T12:25:36Z-
dc.language.rfc3066eng-
dc.relation.csic-
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