English   español  
Please use this identifier to cite or link to this item: http://hdl.handle.net/10261/187988
logo share SHARE logo core CORE   Add this article to your Mendeley library MendeleyBASE

Visualizar otros formatos: MARC | Dublin Core | RDF | ORE | MODS | METS | DIDL | DATACITE
Exportar a otros formatos:


Controlled orientation of molecular-beam-epitaxial BaTiO3 on Si(001) using thickness engineering of BaTiO3 and SrTiO3 buffer layers

AuthorsHsu, Min-Hsiang Mark; Thourhout, Dries van; Pantouvaki, Marianna; Meersschaut, Johan; Conard, Thierry; Richard, Olivier; Bender, Hugo; Favia, Paola; Vila, María; Cid, Rosalia; Rubio-Zuazo, J. ; Castro, Germán R. ; Campenhout, Joris van.; Absil, Philippe; Merckling, Clement
Issue Date16-May-2017
PublisherIOP Publishing
CitationApplied Physics Express 10(6): 065501 (2017)
AbstractMonolithically integrating BaTiO on silicon substrates has attracted attention because of the wide spectrum of potential novel applications ranging from electronics to photonics. For optimal device performance, it is important to control the BaTiO domain orientation during thin film preparation. Here, we use molecular beam epitaxy to prepare crystalline BaTiO on Si(001) substrates using a SrTiO buffer layer. A systematic investigation is performed to understand how to control the BaTiO domain orientation through the thickness engineering of the SrTiO buffer layer and the BaTiO layer itself. This provides different possibilities for obtaining a given BaTiO orientation as desired for a specific device application.
Publisher version (URL)https://doi.org/10.7567/APEX.10.065501
Appears in Collections:(ICMM) Artículos
Files in This Item:
File Description SizeFormat 
accesoRestringido.pdf15,38 kBAdobe PDFThumbnail
Show full item record
Review this work

WARNING: Items in Digital.CSIC are protected by copyright, with all rights reserved, unless otherwise indicated.