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Title

Size and emission wavelength control of InAs/InP quantum wires

AuthorsFuster, David CSIC ORCID ; González Sotos, Luisa ; González Díez, Yolanda; González Sagardoy, María Ujué CSIC ORCID ; Martínez Pastor, Juan Pascual
KeywordsIndium compounds
III-V semiconductors
Semiconductor quantum wires
Self-assembly
Photoluminescence
Issue Date3-Aug-2005
PublisherAmerican Institute of Physics
CitationJournal of Applied Physics 98, 033502 (2005)
AbstractFor a certain heteroepitaxial system, the optical properties of self-assembled nanostructures basically depend on their size. In this work, we have studied different ways to modify the height of InAs/InP quantum wires (QWrs) in order to change the photoluminescence emission wavelength. One procedure consists of changing the QWr size by varying the amount of InAs deposited. The other two methods explored rely on the control of As/P exchange process, in one case during growth of InAs on InP for QWr formation and in the other case during growth of InP on InAs for QWr capping. The combination of the three approaches provides a fine tuning of QWr emission wavelength between 1.2 and 1.9 µm at room temperature.
Description5 páginas, 5 figuras, 1 tabla.-- Comunicación presentada al E-MRS 2004 Spring Meeting celebrado en Estrasburgo (Francia) Mayo del 2004.
Publisher version (URL)http://link.aip.org/link/?JAPIAU/98/033502/1
http://dx.doi.org/10.1063/1.1996307
URIhttp://hdl.handle.net/10261/18780
DOI10.1063/1.1996307
ISSN0021-8979
Appears in Collections:(IMN-CNM) Artículos

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