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Título

Free-carrier contribution to the optical response of N-rich Cu3N thin films

AutorGordillo, Nuria; González-Arrabal, Raquel ; Álvarez-Herrero, A.; Agulló-López, F.
Palabras claveNitrogen
Optical transitions
Semiconductor
Thin films
Fecha de publicación23-jul-2009
EditorAmerican Institute of Physics
CitaciónJournal of Physics D: Applied Physics, 42, 165101 (2009)
ResumenThe influence of nitrogen excess on the optical response of N-rich Cu3N films is reported. The optical spectra measured in the wavelength range from 0.30 to 20.00 µm have been correlated with the elemental film composition which can be adjusted in the nitrogen atomic percentage (at%) range from 27 ± 2 up to 33 ± 2. The absorption spectra for the N-rich films are consistent with direct optical transitions corresponding to the stoichiometric semiconductor Cu3N plus a free-carrier contribution that can be tuned in accordance with the N-excess. The data are consistent with the incorporation of the excess N in the lattice as an electron acceptor that generates free holes.
Versión del editorhttp://link.aip.org
http://dx.doi.org/ 10.1088/0022-3727/42/16/165101
URIhttp://hdl.handle.net/10261/18730
DOI10.1088/0022-3727/42/16/165101
ISSN0022-3727
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