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Título

Noise properties in semiconductor ring lasers

AutorPérez Serrano, Antonio ; Zambrini, Roberta ; Scirè, Alessandro ; Colet, Pere
Palabras claveSemiconductor lasers
Ring lasers
Laser dynamics
Fecha de publicación1-mar-2008
EditorSociety of Photo-Optical Instrumentation Engineers
CitaciónProceedings SPIE 6997: 69971Q (2008)
ResumenWe analyze a rate equation model in the Langevin formulation for the two modes of the electric field and the carrier density, modelling the spontaneous emission noise in a semiconductor ring laser biased in the bidirectional regime. We analytically investigate the influence of complex backscattering coefficient when the two modes are reinterpreted in terms of mode-intensity sum (I-Spectrum) and difference (D-spectrum). The D-spectrum represents the energy exchange between the two counterpropagating modes and it is shaped by the noisy precursor of a Hopf bifurcation influenced mainly by the conservative backscattering. The I-Spectrum reflects the energy exchange between the total field and the medium and behaves similarly to the standard relative intensity noise for single-mode semiconductor lasers. Good agreement between analytical approximation and numerical results is found.
DescripciónEn: Conference semiconductor lasers and laser dynamics III, Strasbourg (France), 7 April 2008. Eds. Krassimir P. Panajotov, Marc Sciamanna, Angel A. Valle, Rainer Michalzik.-- Published Online: 5 May 2008.-- 8 pages, 3 figures.
Versión del editorhttp://dx.doi.org/10.1117/12.780985
URIhttp://hdl.handle.net/10261/18695
DOI10.1117/12.780985
ISSN0277-786X (Print)
1996-756X (Online)
Aparece en las colecciones: (IFISC) Comunicaciones congresos
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