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Bipolar resistive switching on TiO2/Au by conducting Atomic Force Microscopy

AuthorsLinares Moreau, Mercedes; Barella, Mariano; López Mir, Laura CSIC ORCID; Ghenzi, Néstor; Golmar, Federico; Granja, Leticia Paula; Ocal, Carmen CSIC ORCID; Levy, Pablo
KeywordsResistive switching
Titaniun dioxide
Memory devices
Issue Date30-May-2019
CitationMaterials Today Proceedings 14: 100-103 (2019)
AbstractIn this work we present a Conducting Atomic Force Microscopy (CAFM) study of TiO2 thin films that display bipolar resistive switching behavior. Samples were synthesized by reactive sputtering after a lithography process to obtain the bottom Au electrodes on a SiO2/Si substrate. Pt and Pt-Ir coated tips were used for CAFM measurements. We compare these results with I-V characteristics of the same device with Al top electrodes in a crossbar pattern. We demonstrate the existence of two stable resistive states and the bipolar nature of the switching through current-voltage CAFM measurements, discussing the possible transport and switching mechanisms.
Publisher version (URL)http://dx.doi.org/10.1016/j.matpr.2019.05.062
Appears in Collections:(ICMAB) Artículos
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