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Comparison of Ti/Au and Mo/Au TESs characterized under DC bias

AuthorsPobes, Carlos; Fàbrega, Lourdes ; Camón, Agustín; Strichovanec, Pavel; Moral-Vico, Javier; Casañ Pastor, Nieves ; Jáudenes, Rosa M. ; Sesé Monclús, Javier ; Khosropanah, Pourya; Taralli, Emanuele; Nagayoshi, Kenichiro
Issue Date2018
CitationWOLTE 13 (2018)
AbstractTransition Edge Sensors (TESs) are used as extremely sensitive thermometers in a wide range of applications. When coupled to a suitable absorber, they can detect, with unprecedented energy resolution, electromagnetic radiation from microwaves to gamma rays. To achieve this performance, they need to operate at very low temperatures, in the range of 100mK. In order to achieve superconductors with tunable critical temperature (Tc), bilayers made out of few nanometers of a superconductor and a normal metal are used. Depending on the selected materials and thicknesses, the Tc and normal resistance Rn of the device can be selected, which will impact their performance. Different groups worldwide develop TES for soft X-rays detection, mainly for future space missions. In Europe, SRON is developing Ti/Au sensors which are characterized under AC bias, adequate for the frequency domain multiplexing of several pixels. ICMA/ICMAB is developing sensors made of Mo/Au bilayers which are characterized under DC bias. Comparison of performances of the two types of sensors and the two operating conditions is basic for future development and optimization of this technology. In this communication we report on the comparison of Ti/Au and Mo/Au devices characterized under DC bias at ICMA facilities. We analyse the evolution of TES parameters at different operation points taking into account the differences between both materials and fabrication procedures.
DescriptionResumen del trabajo presentado al 13th Workshop on Low Temperature Electronics (WOLTE-13), celebrado en Sorrento (Italia) del 10 al 13 de septiembre de 2018.
Appears in Collections:(ICMAB) Comunicaciones congresos
(ICMA) Comunicaciones congresos
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