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Gadolinium scandate by high-pressure sputtering for future generations of high-κ dielectrics

AuthorsFeijoo, P. C.; Pampillón, M. A.; San Andrés, E.; García Fierro, José Luis
Issue Date2013
PublisherIOP Publishing
CitationSemiconductor Science and Technology 28: 085004 (2013)
AbstractGd-rich gadolinium scandate (Gd2-xScxO3) was deposited by high-pressure sputtering on (1 0 0) silicon by alternating the deposition of <0.5 nm thick films of its binary components: Sc 2O3 and Gd2O3. The formation of the ternary oxide was observed after the thermal treatments, with a high increase in the effective permittivity of the dielectric (up to 21). The silicon diffuses into the Gd2-xScxO3 films, which show an amorphous character. After the annealing no interfacial silicon oxide is present. CHF-VG curves indicated low hysteresis (55 mV) and a density of interfacial defects of 6 × 1011 eV -1 cm-2.
Publisher version (URL)https://doi.org/10.1088/0268-1242/28/8/085004
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