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http://hdl.handle.net/10261/182667
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Campo DC | Valor | Lengua/Idioma |
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dc.contributor.author | Dago, Arancha I. | es_ES |
dc.contributor.author | Sangiao, S. | es_ES |
dc.contributor.author | Fernández-Pacheco, Rodrigo | es_ES |
dc.contributor.author | Teresa, José María de | es_ES |
dc.contributor.author | García García, Ricardo | es_ES |
dc.date.accessioned | 2019-05-28T12:45:00Z | - |
dc.date.available | 2019-05-28T12:45:00Z | - |
dc.date.issued | 2018 | - |
dc.identifier.citation | Fuerzas y Túnel (2018) | es_ES |
dc.identifier.uri | http://hdl.handle.net/10261/182667 | - |
dc.description | Resumen del trabajo presentado a la Conferencia bienal Fuerzas y Túnel, celebrada en Jaca (España) del 27 al 29 de junio de 2018. | es_ES |
dc.description.abstract | We report a combination of force microscopy, high resolution TEM, focused ion beam nanolithography and high spatial resolution electron spectroscopies (Electron Energy Loss Spectroscopy (EELS) and Energy-Dispersive X-ray spectroscopy (EDX)) to characterize the structure and chemical composition of sub-4 nm in height and sub-20 nm in width patterns fabricated by oxidation scanning probe lithography on graphene. The spectroscopic analysis shows that the patterns contain C and O which confirms the existence of graphene oxide. The o-SPL patterns grow 1-3 nm above and below the graphene baseline. This also implies the local modification of the underneath SiC during the o-SPL patterning. However, by tuning the o-SPL oxidation parameters it is possible to restrict the modification to the graphene layer. The patterns have a trapezoidal shape dominated by the length of the base. We have shown that for the smallest and thinnest oxides (total thickness of about 2 nm), the shape is almost rectangular. This is important in order to define the real distance between the dielectric barriers in a quantum dot device. | es_ES |
dc.language.iso | eng | es_ES |
dc.rights | closedAccess | es_ES |
dc.title | Chemical and structural analysis of sub-20 nm graphene patterns generated by scanning probe lithography | es_ES |
dc.type | comunicación de congreso | es_ES |
dc.description.peerreviewed | Peer reviewed | es_ES |
dc.relation.csic | Sí | es_ES |
oprm.item.hasRevision | no ko 0 false | * |
dc.type.coar | http://purl.org/coar/resource_type/c_5794 | es_ES |
item.openairecristype | http://purl.org/coar/resource_type/c_18cf | - |
item.fulltext | No Fulltext | - |
item.cerifentitytype | Publications | - |
item.openairetype | comunicación de congreso | - |
item.languageiso639-1 | en | - |
item.grantfulltext | none | - |
Aparece en las colecciones: | (ICMA) Comunicaciones congresos (ICMM) Comunicaciones congresos |
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