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Type-II GaAsSb/GaAsN superlattice solar cells

AuthorsGonzalo, A.; Utrilla, A. D.; Aeberhard, U.; Llorens Montolio, José Manuel ; Alén, Benito ; Fuertes Marrón, D.; Guzmán, Álvaro; Hierro, Adrián; Ulloa, J. M.
Issue Date27-Jan-2018
CitationProceedings Physics, Simulation, and Photonic Engineering of Photovoltaic Devices VII 10527: 105270D (2018)
AbstractDilute nitride GaAsSbN is an ideal candidate to form the 1-1.15 eV lattice-matched sub-cell that would significantly enhance the performance of 3- and 4-junction solar cells. However, growth problems inherent to this quaternary alloy lead typically to a poor crystal quality that limits its applicability. Better compositional control and crystal quality have been recently reported by growing the material as a GaAsSb/GaAsN superlattice, because of the spatial separation of Sb and N that avoid miscibility problems. Moreover, these structures provide bandgap tunability trough period thickness. Here we study the performance of lattice-matched 1.15 eV GaAsSb/GaAsN type-II superlattice p-i-n junction solar cells with different period thickness and compare them with the bulk and GaAsSbN/GaAs type-I superlattice counterparts. We demonstrate carrier lifetime tunability through the period thickness in the type-II structures. However, the long carrier lifetimes achievable with periods thicker than 12 nm are incompatible with a high carrier extraction efficiency under short-circuit conditions. Only superlattices with thinner periods and short carrier lifetimes show good solar cell performance. Quantum kinetic calculations based on the non-equilibrium Green’s function (NEGF) formalism predict a change in transport regime from direct tunneling extraction to sequential tunneling with sizable thermionic emission components when passing from 6 nm to 12 nm period length, which for low carrier lifetime results in a decrease of extraction efficiency by more than 30%.
DescriptionTrabajo presentado en el SPIE Octo: Physics, Simulation, and Photonic Engineering of Photovoltaic Devices VII, celebrado en San Francisco (California, Estado Unidos), del 27 de enero al 1 de febrero de 2018
Publisher version (URL)https://doi.org/10.1117/12.2290079
Appears in Collections:(IMN-CNM) Comunicaciones congresos
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