English   español  
Please use this identifier to cite or link to this item: http://hdl.handle.net/10261/181995
Share/Impact:
Statistics
logo share SHARE logo core CORE   Add this article to your Mendeley library MendeleyBASE

Visualizar otros formatos: MARC | Dublin Core | RDF | ORE | MODS | METS | DIDL
Exportar a otros formatos:
Title

High surface coverage of a self-assembled monolayer by in situ synthesis of palladium nanodeposits

AuthorsHerrer, I. Lucía; Sebastian, Victor; Martín, Santiago; González-Orive, Alejandro; Perez Murano, Francesc X. ; Low, Paul J.; Serrano, José Luis; Santamaría, Jesús; Cea, Pilar
Issue Date2017
PublisherRoyal Society of Chemistry
CitationNanoscale 9(35): 13281-13290 (2017)
AbstractNascent metal|monolayer|metal devices have been fabricated by depositing palladium, produced through a CO-confined growth method, onto a self-assembled monolayer of an amine-terminated oligo(phenylene ethynylene) derivative on a gold bottom electrode. The high surface area coverage (85%) of the organic monolayer by densely packed palladium particles was confirmed by X-ray photoemission spectroscopy (XPS) and atomic force microscopy (AFM). The electrical properties of these nascent Au|monolayer|Pd assemblies were determined from the I-V curves recorded with a conductive-AFM using the Peak Force Tunneling AFM (PF-TUNA™) mode. The I-V curves together with the electrochemical experiments performed rule out the formation of short-circuits due to palladium penetration through the monolayer, suggesting that the palladium deposition strategy is an effective method for the fabrication of molecular junctions without damaging the organic layer.
Publisher version (URL)https://doi.org/10.1039/C7NR03365F
URIhttp://hdl.handle.net/10261/181995
DOI10.1039/C7NR03365F
ISSN2040-3364
E-ISSN2040-3372
Appears in Collections:(IMB-CNM) Artículos
(ICMA) Artículos
Files in This Item:
File Description SizeFormat 
nanodeposit.pdf2,34 MBAdobe PDFThumbnail
View/Open
Show full item record
Review this work
 

Related articles:


WARNING: Items in Digital.CSIC are protected by copyright, with all rights reserved, unless otherwise indicated.