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Título

Coexistence of elastic Modulations in the charge density wave state of 2H-NbSe2

AutorGuster, Bogdan CSIC ORCID; Rubio-Verdú, Carmen; Robles, Roberto CSIC ORCID ; Zaldívar-Fernández, Javier; Dreher, Paul CSIC ORCID; Pruneda, Miguel CSIC ORCID ; Silva-Guillén, José Ángel CSIC ORCID; Deung-Jang, Choi; Pascual, José I.; Ugeda, Miguel M. CSIC ORCID CVN; Ordejón, Pablo CSIC ORCID; Canadell, Enric CSIC ORCID
Palabras clave2H-NbSe2
Charge density waves
DFT calculations
STM
Transition metal dichalcogenides
Fecha de publicación8-may-2019
EditorAmerican Chemical Society
CitaciónNano Letters 19(5): 3027–3032 (2019)
ResumenBulk and single-layer 2H-NbSe2 exhibit identical charge density wave order (CDW) with a quasi-commensurate 3 × 3 superlattice periodicity. Here we combine scanning tunnelling microscopy (STM) imaging at T = 1 K of 2H-NbSe2 with first-principles density functional theory (DFT) calculations to investigate the structural atomic rearrangement of this CDW phase. Our calculations for single-layers reveal that six different atomic structures are compatible with the 3 × 3 CDW distortion, although all of them lie on a very narrow energy range of at most 3 meV per formula unit, suggesting the coexistence of such structures. Our atomically resolved STM images of bulk 2H-NbSe2 unambiguously confirm this by identifying two of these structures. Remarkably, these structures differ from the X-ray crystal structure reported for the bulk 3 × 3 CDW which in fact is also one of the six DFT structures located for the single-layer. Our calculations also show that due to the minute energy difference between the different phases, the ground state of the 3 × 3 CDW could be extremely sensitive to doping, external strain or internal pressure within the crystal. The presence of multiphase CDW order in 2H-NbSe2 may provide further understanding of its low temperature state and the competition between different instabilities.
Versión del editorhttp://dx.doi.org/10.1021/acs.nanolett.9b00268
URIhttp://hdl.handle.net/10261/181882
ISSN1530-6984
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