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dc.contributor.authorMengdi, Qianes_ES
dc.contributor.authorFina, Ignasies_ES
dc.contributor.authorSánchez Barrera, Florencioes_ES
dc.contributor.authorFontcuberta, Josepes_ES
dc.date.accessioned2019-05-21T08:56:51Z-
dc.date.available2019-05-21T08:56:51Z-
dc.date.issued2019-03-15-
dc.identifier.citationSmall 15(11): 1805042 (2019)es_ES
dc.identifier.issn1613-6810-
dc.identifier.urihttp://hdl.handle.net/10261/181854-
dc.description.abstractComplementary resistive switching (CRS) devices are receiving attention because they can potentially solve the current‐sneak and current‐leakage problems of memory arrays based on resistive switching (RS) elements. It is shown here that a simple anti‐serial connection of two ferroelectric tunnel junctions, based on BaTiO3, with symmetric top metallic electrodes and a common, floating bottom nanometric film electrode, constitute a CRS memory element. It allows nonvolatile storage of binary states (“1” = “HRS+LRS” and “0” = “LRS+HRS”), where HRS (LRS) indicate the high (low) resistance state of each ferroelectric tunnel junction. Remarkably, these states have an identical and large resistance in the remanent state, characteristic of CRS. Here, protocols for writing information are reported and it is shown that non‐destructive or destructive reading schemes can be chosen by selecting the appropriate reading voltage amplitude. Moreover, this dual‐tunnel device has a significantly lower power consumption than a single ferroelectric tunnel junction to perform writing/reading functions, as is experimentally demonstrated. These findings illustrate that the recent impressive development of ferroelectric tunnel junctions can be further exploited to contribute to solving critical bottlenecks in data storage and logic functions implemented using RS elements.es_ES
dc.description.sponsorshipFinancial support from the Spanish Ministry of Science, Innovation and Universities, through the “Severo Ochoa” Programme for Centres of Excellence in R&D (SEV‐2015‐0496) and the MAT2017‐85232‐R (AEI/FEDER, EU), MAT2014‐56063‐C2‐1‐R, and MAT2015‐73839‐JIN projects, and from Generalitat de Catalunya (2017 SGR 1377) is acknowledged. I.F. acknowledges Ramon y Cajal contract RYC‐2017‐22531. M.Q. was financially supported by China Scholarship Council (CSC) with No. 201406890019. M.Q.'s work was done as a part of the Ph.D. program in Materials Science at Universitat Autònoma de Barcelona.es_ES
dc.language.isoenges_ES
dc.publisherWiley-VCHes_ES
dc.relationMINECO/ICTI2013-2016/SEV-2015-0496es_ES
dc.relationMICIU/ICTI2017-2021/MAT2017‐85232‐Res_ES
dc.relationMINECO/ICTI2013-2016/MAT2014‐56063‐C2‐1‐Res_ES
dc.relationMINECO/ICTI2013-2016/MAT2015‐73839‐JINes_ES
dc.relation.isversionofPostprintes_ES
dc.rightsembargoedAccesses_ES
dc.subjectBaTiO3es_ES
dc.subjectComplementary resistive switchinges_ES
dc.subjectFerroelectrices_ES
dc.subjectFerroelectric tunnel junctionses_ES
dc.titleComplementary Resistive Switching Using Metal–Ferroelectric–Metal Tunnel Junctionses_ES
dc.typeartículoes_ES
dc.description.peerreviewedPeer reviewedes_ES
dc.relation.publisherversionhttp://dx.doi.org/10.1002/smll.201805042es_ES
dc.embargo.terms2020-03-15es_ES
dc.contributor.funderMinisterio de Ciencia, Innovación y Universidades (España)es_ES
dc.contributor.funderGeneralitat de Catalunyaes_ES
dc.relation.csices_ES
oprm.item.hasRevisionno ko 0 false*
dc.identifier.funderhttp://dx.doi.org/10.13039/501100002809es_ES
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