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Spin-valley relaxation and quantum transport regimes in two-dimensional transition-metal dichalcogenides

AuthorsOchoa, Héctor; Finocchiaro, Francesca; Guinea, F. ; Fal'Ko, Vladimir I.
Issue Date22-Dec-2014
PublisherAmerican Physical Society
CitationPhysical Review - Section B - Condensed Matter 90(23): 235429 (2014)
AbstractQuantum transport and spintronics regimes are studied in p- and n-doped atomic layers of hexagonal transition-metal dichalcogenides (TMDCs), subject to the interplay between the valley structure and spin-orbit coupling. We find how spin relaxation of carriers depends on their areal density and show that it vanishes for holes near the band edge, leading to the density-independent spin-diffusion length, and we develop a theory of weak localization/antilocalization, describing the crossovers between the orthogonal, double-unitary, and symplectic regimes of quantum transport in TMDCs.
Publisher version (URL)https://doi.org/10.1103/PhysRevB.90.235429
Identifiersdoi: 10.1103/PhysRevB.90.235429
e-issn: 1550-235X
issn: 1098-0121
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