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dc.contributor.authorUtrilla, A. D.es_ES
dc.contributor.authorReyes, D. F.es_ES
dc.contributor.authorLlorens Montolio, José Manueles_ES
dc.contributor.authorGonzalo, A.es_ES
dc.contributor.authorArtacho, Irenees_ES
dc.contributor.authorBen, Teresaes_ES
dc.contributor.authorGonzález, Davides_ES
dc.contributor.authorGačević, Žarkoes_ES
dc.contributor.authorGuzmán, Álvaroes_ES
dc.contributor.authorHierro, Adriánes_ES
dc.date.accessioned2019-05-20T10:48:27Z-
dc.date.available2019-05-20T10:48:27Z-
dc.date.issued2016-06-20-
dc.identifier.citation32nd European Photovoltaic Solar Energy Conference and Exhibition (2016)es_ES
dc.identifier.urihttp://hdl.handle.net/10261/181754-
dc.descriptionTrabajo presentado en el 32nd European Photovoltaic Solar Energy Conference and Exhibition, celebrado en Munich (Alemania), del 20 al 24 de junio de 2016es_ES
dc.description.abstractThe use of thin GaAsSb capping layers (CLs) is demonstrated to provide InAs/GaAs quantum dot (QD) solar cells (SCs) with improved efficiencies up to 20%. The application of such CLs allows the tunability of the QD ground state, switching the QD-CL band alignment to type II for high Sb contents and extending the photoresponse up to 1.5 μm. Moreover, the CL provides a significant contribution to the photocurrent. An improved carrier collection efficiency is also found to be a main reason behind the increase of the short-circuit current density, unveiling a negative impact of the wetting layer (WL) on carrier transport in standard InAs/GaAs QD SCs. Calculations from an 8×8 k·p method suggest the attribution of such an improvement to longer carrier lifetimes in the WL-CL structure due to the transition to a type-II band alignment in Sb-containing structures. A faster open-circuit voltage recovery under light concentration is demonstrated for high Sb content type-II QD-CL structures, leading, in turn, to faster efficiency improvements with light power.es_ES
dc.language.isoenges_ES
dc.rightsclosedAccesses_ES
dc.titleThin GaAsSb capping layers for improved performance of InAs/GaAs quantum dot solar cellses_ES
dc.typecomunicación de congresoes_ES
dc.description.peerreviewedPeer reviewedes_ES
dc.relation.csices_ES
oprm.item.hasRevisionno ko 0 false*
Appears in Collections:(IMN-CNM) Comunicaciones congresos
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