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Thin GaAsSb capping layers for improved performance of InAs/GaAs quantum dot solar cells

AuthorsUtrilla, A. D.; Reyes, D. F.; Llorens Montolio, José Manuel ; Gonzalo, A.; Artacho, Irene; Ben, Teresa; González, David; Gačević, Žarko; Guzmán, Álvaro; Hierro, Adrián
Issue Date20-Jun-2016
Citation32nd European Photovoltaic Solar Energy Conference and Exhibition (2016)
AbstractThe use of thin GaAsSb capping layers (CLs) is demonstrated to provide InAs/GaAs quantum dot (QD) solar cells (SCs) with improved efficiencies up to 20%. The application of such CLs allows the tunability of the QD ground state, switching the QD-CL band alignment to type II for high Sb contents and extending the photoresponse up to 1.5 μm. Moreover, the CL provides a significant contribution to the photocurrent. An improved carrier collection efficiency is also found to be a main reason behind the increase of the short-circuit current density, unveiling a negative impact of the wetting layer (WL) on carrier transport in standard InAs/GaAs QD SCs. Calculations from an 8×8 k·p method suggest the attribution of such an improvement to longer carrier lifetimes in the WL-CL structure due to the transition to a type-II band alignment in Sb-containing structures. A faster open-circuit voltage recovery under light concentration is demonstrated for high Sb content type-II QD-CL structures, leading, in turn, to faster efficiency improvements with light power.
DescriptionTrabajo presentado en el 32nd European Photovoltaic Solar Energy Conference and Exhibition, celebrado en Munich (Alemania), del 20 al 24 de junio de 2016
Appears in Collections:(IMN-CNM) Comunicaciones congresos
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