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Título: | Reversible electric-field control of magnetization at oxide interfaces |
Autor: | Cuellar, Fabián A.; Liu, Y. H.; Salafranca, J.; Nemes, N. M. CSIC ORCID CVN; Iborra, E.; Sanchez-Santolino, Gabriel CSIC ORCID; Varela, M.; García-Hernández, Mar CSIC ORCID ; Freeland, J. W.; Zhernenkov, M.; Fitzsimmons, M. R.; Okamoto, S.; Pennycook, Stephen J.; Bibes, M.; Barthélémy, A.; Te Velthuis, S. G. E.; Sefrioui, Z.; Leon, C.; Santamaría, Jacobo CSIC ORCID | Fecha de publicación: | 23-jun-2014 | Editor: | Springer Nature | Citación: | Nature Communications 5: 4215 (2014) | Resumen: | Electric-field control of magnetism has remained a major challenge which would greatly impact data storage technology. Although progress in this direction has been recently achieved, reversible magnetization switching by an electric field requires the assistance of a bias magnetic field. Here we take advantage of the novel electronic phenomena emerging at interfaces between correlated oxides and demonstrate reversible, voltage' driven magnetization switching without magnetic field. Sandwiching a non-superconducting cuprate between two manganese oxide layers, we find a novel form of magnetoelectric coupling arising from the orbital reconstruction at the interface between interfacial Mn spins and localized states in the CuO 2 planes. This results in a ferromagnetic coupling between the manganite layers that can be controlled by a voltage. Consequently, magnetic tunnel junctions can be electrically toggled between two magnetization states, and the corresponding spin' dependent resistance states, in the absence of a magnetic field. | Versión del editor: | https://doi.org/10.1038/ncomms5215 | URI: | http://hdl.handle.net/10261/181753 | DOI: | 10.1038/ncomms5215 | Identificadores: | doi: 10.1038/ncomms5215 e-issn: 2041-1723 |
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