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dc.contributor.authorUtrilla, A. D.es_ES
dc.contributor.authorReyes, D. F.es_ES
dc.contributor.authorLlorens Montolio, José Manueles_ES
dc.contributor.authorArtacho, Irenees_ES
dc.contributor.authorBen, Teresaes_ES
dc.contributor.authorGonzález, Davides_ES
dc.contributor.authorGačević, Žarkoes_ES
dc.contributor.authorKurtz, Alejandroes_ES
dc.contributor.authorGuzmán, Álvaroes_ES
dc.contributor.authorHierro, Adriánes_ES
dc.contributor.authorUlloa, J. M.es_ES
dc.identifier.citationSolar Energy Materials and Solar Cells 159: 282-289 (2017)es_ES
dc.description.abstractThis work reports on the benefits from using thin GaAsSb capping layers (CLs) on InAs/GaAs quantum dot (QD) solar cells. The application of such CLs allows the tunability of the QD ground state, switching the QD-CL band alignment from type I to type II for high Sb contents and extending the photoresponse beyond 1.5 µm. Two different structures with ~10% and ~20% Sb contents in the CL (type-I and type-II band alignments, respectively) are explored, leading to efficiency improvements over a reference InAs/GaAs QD solar cell of 20% and 10%, respectively. In general, a significant increase in short-circuit current density (Jsc) is observed, partially due to the extended photocurrent spectrum and the additional contribution of the CL itself. Particularly, for a moderate Sb content, an improved carrier collection efficiency is also found to be a main reason for the Jsc increase. Calculations from an 8×8 k·p method suggest the attribution of such an improvement to longer carrier lifetimes in the wetting layer-CL structure due to the transition to a type-II band alignment. Open-circuit voltages (Voc) exceeding that of a reference QD solar cell are demonstrated under light concentration using GaAsSb CLs, which proves that the Voc is not limited by the low bandgap CLs. Moreover, the highest value is obtained for the high Sb content type-II structure, despite the higher accumulation of strain and the lower effective bandgap. Indeed, the faster Voc increase with light power found in the latter case leads to an Voc even larger than the effective bandgap.es_ES
dc.description.sponsorshipWe acknowledge the Spanish MICINN-MINECO for funding through project MAT2013-47102-C2-2-R. JMLL and IA acknowledge the financial support of the Comunidad Autónoma de Madrid (Grant S2013/MAE-2780), TEC2015-64189-C3-2-R (MINECO/FEDER) and MINECO (Grant AIC-B_2011-0806).es_ES
dc.subjectSolar cellses_ES
dc.subjectQuantum dotses_ES
dc.subjectCapping layerses_ES
dc.subjectCarrier collection efficiencyes_ES
dc.titleThin GaAsSb capping layers for improved performance of InAs/GaAs quantum dot solar cellses_ES
dc.description.peerreviewedPeer reviewedes_ES
dc.contributor.funderMinisterio de Economía y Competitividad (España)es_ES
dc.contributor.funderComunidad de Madrides_ES
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