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dc.contributor.authorPérez Taborda, Jaime Andréses_ES
dc.contributor.authorMuñoz Rojo, Migueles_ES
dc.contributor.authorMaiz, Jones_ES
dc.contributor.authorNeophytou,Neophytoses_ES
dc.contributor.authorMartín-González, Marisoles_ES
dc.date.accessioned2019-05-16T13:11:01Z-
dc.date.available2019-05-16T13:11:01Z-
dc.date.issued2016-09-21-
dc.identifier.citationScientific Reports 6: 32778 (2016)es_ES
dc.identifier.urihttp://hdl.handle.net/10261/181544-
dc.description.abstractIn this work, we measure the thermal and thermoelectric properties of large-area Si0.8Ge0.2 nano-meshed films fabricated by DC sputtering of Si0.8Ge0.2 on highly ordered porous alumina matrices. The Si0.8Ge0.2 film replicated the porous alumina structure resulting in nano-meshed films. Very good control of the nanomesh geometrical features (pore diameter, pitch, neck) was achieved through the alumina template, with pore diameters ranging from 294 ± 5nm down to 31 ± 4 nm. The method we developed is able to provide large areas of nano-meshes in a simple and reproducible way, being easily scalable for industrial applications. Most importantly, the thermal conductivity of the films was reduced as the diameter of the porous became smaller to values that varied from κ = 1.54 ± 0.27 W K−1m−1, down to the ultra-low κ = 0.55 ± 0.10 W K−1m−1 value. The latter is well below the amorphous limit, while the Seebeck coefficient and electrical conductivity of the material were retained. These properties, together with our large area fabrication approach, can provide an important route towards achieving high conversion efficiency, large area, and high scalable thermoelectric materials.es_ES
dc.description.sponsorshipThis work has been supported by 7th framework European project NANOHITEC 263306, national project PHOMENTA MAT2011-27911, CONSOLIDER NANOTHERM Grant No. CSD2010-00044, and INFANTE. J.A. Pérez acknowledges Ministerio de Economia y Competitividad for his FPI grant and Banco Santander for a special grant for a short stay in Brazil (Brazilian Center of Physical Researches-Rio de Janeiro). M. M. R. wants to acknowledge JAE Pre-Doc grant for PhD financial support. NN acknowledges funding from the European Research Council (ERC) under the European Union’s Horizon 2020 research and innovation programme (grant agreement No 678763). NN also acknowledges Dr. Hossein Karamitaheri for helpful discussions. MMG wants also to acknowledge the Salvador Madariaga Fellowship.es_ES
dc.language.isoenges_ES
dc.publisherNature Publishing Groupes_ES
dc.relationinfo:eu-repo/grantAgreement/EC/FP7/263306es_ES
dc.relationinfo:eu-repo/grantAgreement/EC/H2020/678763es_ES
dc.relation.isversionofPublisher's versiones_ES
dc.rightsopenAccesses_ES
dc.titleUltra-low thermal conductivities in large-area Si-Ge nanomeshes for thermoelectric applicationses_ES
dc.typeartículoes_ES
dc.identifier.doi10.1038/srep32778-
dc.description.peerreviewedPeer reviewedes_ES
dc.relation.publisherversionhttps://doi.org/10.1038/srep32778es_ES
dc.identifier.e-issn2045-2322-
dc.rights.licensehttp://creativecommons.org/licenses/by/4.0/es_ES
dc.contributor.funderEuropean Commissiones_ES
dc.contributor.funderMinisterio de Economía y Competitividad (España)es_ES
dc.contributor.funderBanco Santanderes_ES
dc.contributor.funderConsejo Superior de Investigaciones Científicas (España)es_ES
dc.contributor.funderEuropean Research Counciles_ES
dc.contributor.funderMinisterio de Educación, Cultura y Deporte (España)es_ES
dc.contributor.funderCentro Brasileiro de Pesquisas Físicas (Brasil)es_ES
dc.relation.csices_ES
oprm.item.hasRevisionno ko 0 false*
dc.identifier.funderhttp://dx.doi.org/10.13039/100010784es_ES
dc.identifier.funderhttp://dx.doi.org/10.13039/501100003339es_ES
dc.identifier.funderhttp://dx.doi.org/10.13039/501100000781es_ES
dc.identifier.funderhttp://dx.doi.org/10.13039/501100003176es_ES
dc.identifier.funderhttp://dx.doi.org/10.13039/501100003329es_ES
dc.identifier.funderhttp://dx.doi.org/10.13039/501100000780es_ES
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