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Título: | Temperature-dependent thermal and thermoelectric properties of n -type and p -type S c 1 − x M g x N |
Autor: | Saha, Bivas; Pérez Taborda, Jaime Andrés CSIC ORCID; Bahk, Je-Hyeong; Koh, Yee Rui; Shakouri, Ali; Martín-González, Marisol CSIC ORCID ; Sands, Timothy | Fecha de publicación: | 15-feb-2018 | Editor: | American Physical Society | Citación: | Physical Review - Section B - Condensed Matter 97(8): 085301 (2018) | Resumen: | Scandium Nitride (ScN) is an emerging rocksalt semiconductor with octahedral coordination and an indirect bandgap. ScN has attracted significant attention in recent years for its potential thermoelectric applications, as a component material in epitaxial metal/semiconductor superlattices, and as a substrate for defect-free GaN growth. Sputter-deposited ScN thin films are highly degenerate n-type semiconductors and exhibit a large thermoelectric power factor of∼3.5 × 10−3 W/m-K2 at 600–800 K. Since practical thermoelectric devices require both n- and p-type materials with high thermoelectric figures-of-merit, development and demonstration of highly efficient p-type ScN is extremely important. Recently, the authors have demonstrated p-type Sc1−xMgxN thin film alloys with low MgxNy mole-fractions within the ScN matrix. In this article, we demonstrate temperature dependent thermal and thermoelectric transport properties, including large thermoelectric power factors in both n- and p-type Sc1−xMgxN thin film alloys at high temperatures (up to 850 K). Employing a combination of temperature-dependent Seebeck coefficient, electrical conductivity, and thermal conductivity measurements, as well as detailed Boltzmann transport-based modeling analyses of the transport properties, we demonstrate that p-type Sc1−xMgxN thin film alloys exhibit a maximum thermoelectric power factor of ∼0.8 × 10−3 W/m-K2 at 850 K. The thermoelectric properties are tunable by adjusting the MgxNy mole-fraction inside the ScN matrix, thereby shifting the Fermi energy in the alloy films from inside the conduction band in case of undoped n-type ScN to inside the valence band in highly hole-doped p-type Sc1−xMgxN thin film alloys. The thermal conductivities of both the n- and p-type films were found to be undesirably large for thermoelectric applications. Thus, future work should address strategies to reduce the thermal conductivity of Sc1−xMgxN thin-film alloys, without affecting the power factor for improved thermoelectric performance | Versión del editor: | https://doi.org/10.1103/PhysRevB.97.085301 | URI: | http://hdl.handle.net/10261/181493 | DOI: | 10.1103/PhysRevB.97.085301 | ISSN: | 2469-9950 | E-ISSN: | 2469-9969 |
Aparece en las colecciones: | (IMN-CNM) Artículos |
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Temperature-dependent thermal_Saha.pdf | 2,27 MB | Adobe PDF | Visualizar/Abrir |
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