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dc.contributor.authorPérez de San Román, Etores_ES
dc.contributor.authorPrieto Aguilar, Ivánes_ES
dc.contributor.authorChaudhuri, Anabiles_ES
dc.contributor.authorNeumann, Alexanderes_ES
dc.contributor.authorBrueck, Steven R. J.es_ES
dc.contributor.authorRipalda, José Maríaes_ES
dc.date.accessioned2019-05-13T14:07:12Z-
dc.date.available2019-05-13T14:07:12Z-
dc.date.issued2016-
dc.identifier.citationJournal of Vacuum Science and Technology - Section B 34: 041224 (2016)es_ES
dc.identifier.issn2166-2746-
dc.identifier.urihttp://hdl.handle.net/10261/181317-
dc.description.abstractThe authors demonstrate high aspect ratio and large area metallic nanogrids as transparent electrodes with reduced series resistance on GaAs based optoelectronic devices. The fabrication process uses ultraviolet photolithography techniques, pulsed reactive ion etching, and two metallization steps: a vapor deposited contact seed layer and a thickening step by electrodeposition. As a result, a threefold reduction in resistive power losses is achieved with a contact grid transmission comparable to state-of-the-art devices.es_ES
dc.language.isoenges_ES
dc.publisherAmerican Institute of Physicses_ES
dc.rightsclosedAccesses_ES
dc.titleHigh aspect ratio and large area metallic nanogrids as transparent electrodes on optoelectronic deviceses_ES
dc.typeartículoes_ES
dc.identifier.doi10.1116/1.4954229-
dc.description.peerreviewedPeer reviewedes_ES
dc.relation.publisherversionhttps://doi.org/10.1116/1.4954229es_ES
dc.identifier.e-issn2166-2754-
dc.relation.csices_ES
oprm.item.hasRevisionno ko 0 false*
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