High aspect ratio and large area metallic nanogrids as transparent electrodes on optoelectronic devices

Abstract

The authors demonstrate high aspect ratio and large area metallic nanogrids as transparent electrodes with reduced series resistance on GaAs based optoelectronic devices. The fabrication process uses ultraviolet photolithography techniques, pulsed reactive ion etching, and two metallization steps: a vapor deposited contact seed layer and a thickening step by electrodeposition. As a result, a threefold reduction in resistive power losses is achieved with a contact grid transmission comparable to state-of-the-art devices.