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Título: | InAs nanostructures grown by droplet epitaxy directly on InP(001) substrates |
Autor: | Fuster, David CSIC ORCID ; Abderrafi, Kamal CSIC ORCID; Alén, Benito CSIC ORCID; González Díez, Yolanda CSIC ORCID; Wewior, Lukasz Jakub CSIC; González Sotos, Luisa CSIC ORCID | Palabras clave: | A1: Diffusion A1. Surface processes A3. Molecular beam epitaxy B1. Nanomaterials B2. Semiconducting indium phosphide Droplet Epitaxy |
Fecha de publicación: | 15-ene-2016 | Editor: | Elsevier | Citación: | Journal of Crystal Growth 434: 81-87 (2016) | Resumen: | This work deals with the development of growth processes by droplet epitaxy to obtain InAs quantum dots directly on InP (001) surfaces (without any InGaAs or InAlAs intermediate layer). The indium atoms for droplet formation were deposited at different substrate temperatures, TS, below 300 °C in a solid source molecular beam epitaxy system. From the evolution of the size and shape of the nanostructures with TS, values of magnitudes related with indium atoms diffusivity have been extracted. The photoluminescence signal is investigated for ensemble and single InAs nanostructures emitting around 1.3–1.5 μm. The emission properties drastically change with thermal annealing processes that improve the crystalline quality. | Versión del editor: | https://doi.org/10.1016/j.jcrysgro.2015.11.003 | URI: | http://hdl.handle.net/10261/181242 | DOI: | 10.1016/j.jcrysgro.2015.11.003 | ISSN: | 0022-0248 |
Aparece en las colecciones: | (IMN-CNM) Artículos |
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