English   español  
Please use this identifier to cite or link to this item: http://hdl.handle.net/10261/181146
Share/Impact:
Statistics
logo share SHARE logo core CORE   Add this article to your Mendeley library MendeleyBASE

Visualizar otros formatos: MARC | Dublin Core | RDF | ORE | MODS | METS | DIDL
Exportar a otros formatos:

Title

Compensation of native donor doping in ScN: Carrier concentration control and p-type ScN

AuthorsSaha, Bivas; Garbrecht, Magnus; Pérez Taborda, Jaime Andrés ; Fawey, Mohammed H.; Koh, Yee Rui; Shakouri, Ali; Martín-González, Marisol; Hultman, Lars; Sands, Timothy
Issue Date2017
PublisherAmerican Institute of Physics
CitationApplied Physics Letters 110(25): 252104 (2017)
AbstractScandium nitride (ScN) is an emerging indirect bandgap rocksalt semiconductor that has attracted significant attention in recent years for its potential applications in thermoelectric energy conversion devices, as a semiconducting component in epitaxial metal/semiconductor superlattices and as a substrate material for high quality GaN growth. Due to the presence of oxygen impurities and native defects such as nitrogen vacancies, sputter-deposited ScN thin-films are highly degenerate n-type semiconductors with carrier concentrations in the (1–6) × 1020 cm−3 range. In this letter, we show that magnesium nitride (MgxNy) acts as an efficient hole dopant in ScN and reduces the n-type carrier concentration, turning ScN into a p-type semiconductor at high doping levels. Employing a combination of high-resolution X-ray diffraction, transmission electron microscopy, and room temperature optical and temperature dependent electrical measurements, we demonstrate that p-type Sc1-xMgxN thin-film alloys (a) are substitutional solid solutions without MgxNy precipitation, phase segregation, or secondary phase formation within the studied compositional region, (b) exhibit a maximum hole-concentration of 2.2 × 1020 cm−3 and a hole mobility of 21 cm2/Vs, (c) do not show any defect states inside the direct gap of ScN, thus retaining their basic electronic structure, and (d) exhibit alloy scattering dominating hole conduction at high temperatures. These results demonstrate MgxNy doped p-type ScN and compare well with our previous reports on p-type ScN with manganese nitride (MnxNy) doping.
Publisher version (URL)https://doi.org/10.1063/1.4989530
URIhttp://hdl.handle.net/10261/181146
DOI10.1063/1.4989530
ISSN0003-6951
E-ISSN1077-3118
Appears in Collections:(IMN-CNM) Artículos
Files in This Item:
File Description SizeFormat 
Compensation of native donor_Saha.pdf1,72 MBAdobe PDFThumbnail
View/Open
Show full item record
Review this work
 

Related articles:


WARNING: Items in Digital.CSIC are protected by copyright, with all rights reserved, unless otherwise indicated.