English   español  
Please use this identifier to cite or link to this item: http://hdl.handle.net/10261/181068
Share/Impact:
Statistics
logo share SHARE logo core CORE   Add this article to your Mendeley library MendeleyBASE

Visualizar otros formatos: MARC | Dublin Core | RDF | ORE | MODS | METS | DIDL
Exportar a otros formatos:

Title

Growth and structural characterization of strained epitaxial Hf0.5Zr0.5O2 thin films

AuthorsTorrejón, Luis; Langenberg, Eric; Magen, Cesar; Larrea, A. ; Blasco, Javier; Santiso, José ; Algarabel, Pedro A. ; Pardo, J. A.
Issue Date2018
PublisherAmerican Physical Society
CitationPhysical Review Materials 2(1): 013401 (2018)
AbstractFerroelectricity was recently reported in thin films with several compositions in the HfO2−Zr2 system with orthorhombic crystal structure. In the present paper we study the growth by pulsed laser deposition and the structural characterization of strained epitaxial Hf0.5Zr0.5O2 films on (001)-oriented yttria-stabilized zirconia (YSZ) substrates. We have determined the conditions for the coherent growth and correlated the deposition parameters with the films structure and microstructure studied through a combination of x-ray diffraction, electron backscatter diffraction, and scanning transmission electron microscopy. In the range of experimental parameters explored, all the films show monoclinic structure with distorted lattice parameters relative to bulk.
Publisher version (URL)https://doi.org/10.1103/PhysRevMaterials.2.013401
URIhttp://hdl.handle.net/10261/181068
DOI10.1103/PhysRevMaterials.2.013401
E-ISSN2475-9953
Appears in Collections:(ICMA) Artículos
(CIN2) Artículos
Files in This Item:
File Description SizeFormat 
growthfilms.pdf1,57 MBAdobe PDFThumbnail
View/Open
Show full item record
Review this work
 

Related articles:


WARNING: Items in Digital.CSIC are protected by copyright, with all rights reserved, unless otherwise indicated.