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Epitaxial La0.7Sr0.3MnO3 thin films on silicon with excellent magnetic and electric properties by combining physical and chemical methods

AuthorsVila-Fungueiriño, José M.; Gázquez, Jaume ; Magen, Cesar; Saint-Girons, Guillaume; Bachelet, Romain ; Carretero Genevrier, Adrian
Functional oxides
Silicon integration
Chemical solution deposition
Molecular beam epitaxy
Issue Date2018
PublisherTaylor & Francis
CitationScience and Technology of Advanced Materials 19(1): 702-710 (2018)
AbstractHalf-metallic ferromagnetic La0.7Sr0.3MnO3 (LSMO) represents an appealing candidate to be integrated on silicon substrates for technological devices such as sensors, data storage media, IR detectors, and so on. Here, we report high-quality epitaxial LSMO thin films obtained by an original combination of chemical solution deposition (CSD) and molecular beam epitaxy (MBE). A detailed study of the thermal, chemical, and physical compatibility between SrTiO3 (STO)/Si buffer layers and LSMO films, grown by MBE and CSD, respectively, enables a perfect integration of both materials. Importantly, we show a precise control of the coercive field of LSMO films by tuning the mosaicity of the STO/Si buffer layer. These results demonstrate the enormous potential of combining physical and chemical processes for the development of low-cost functional oxide-based devices compatible with the complementary metal oxide semiconductor technology.
Publisher version (URL)https://doi.org/10.1080/14686996.2018.1520590
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