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Título

Self-assembled InAs quantum wire lasers on (001)InP at 1.6 µm

AutorSuárez Arias, Ferrán ; Fuster, David ; González Díez, Yolanda ; González Sotos, Luisa ; García Martínez, Jorge Manuel ; Dotor, María Luisa
Palabras claveindium compounds
III-V semiconductors
quantum well lasers
semiconductor quantum wires
self-assembly
molecular beam epitaxial growth
atomic layer epitaxial growth
waveguide lasers
semiconductor growth
current density
laser transitions
Fecha de publicación1-sep-2006
EditorAmerican Institute of Physics
CitaciónApplied Physic Letters 89, 091123 (2006);
ResumenIn this work, the authors present results on the growth by atomic layer molecular beam epitaxy and characterization of lasers with one and three stacked layers of InAs quantum wires (QWRs) as active zone and aluminum-free waveguides on (001) InP substrates. The separated confinement heterostructure consists of n-p InP claddings and a waveguide formed by short period superlattices of (InP)5/(GaInAs)4 lattice matched to the InP substrate. The optimum growth conditions (substrate temperature and As and P pressures) have been determined to obtain waveguides with a flat surface in order to get a uniform QWR distribution. Lasing emission is observed at a wavelength of ~1.66 µm up to 270 K from 15×3000 µm2 devices, with a threshold current density at that temperature of 2 kA/cm2.
Descripción3 páginas, 4 figuras.
Versión del editorhttp://link.aip.org
http://dx.doi.org/10.1063/1.2335775
URIhttp://hdl.handle.net/10261/18035
DOI10.1063/1.2335775
ISSN0003-6951
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