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Title

Electronic properties of defects in single-layer MoSe2

AuthorsBarja, Sara; Wickenburg, S.; Schuler, B.; Liu, Z.-F.; Refaely-Abramson, S.; Zhang, Yi; Ryu, Hyejin; Pulkin, Artem; Qi, D. Y.; Ugeda, Miguel M.; Hwang, C.; Hussain, Z.; Shen, Zhi-Xun; Mo, Sung-Kwan; Salmerón, Miquel; Wang, Feng; Crommie, Michael F.; Ogletree, D. F.; Louie, Steven G.; Yazyev, Oleg V.; Neaton, J. B.; Weber-Bargioni, A.
Issue Date2018
CitationInternational conference on Novel 2D materials explored via scanning probe microscopy and spectroscopy (2018)
AbstractIntrinsic properties of 2D transition metal dichalcogenide semiconductors are highly sensitive to the presence of defects in the crystal structure, due to the confined nature of the electronic wavefunctions. Understanding the defect electronic structure at the atomic scale will enable unprecedented control over material functionality. In this talk I will present two different examples of structural defects in single layers of MoSe2. Using 4K scanning tunneling microscopy and spectroscopy, and non-contact atomic force microscopy we visualize and directly correlate in 2D MoSe2 the morphology and electronic properties of structural defects with atomic resolution. In the first example, we identified linear defects in from of mirror twin boundaries in MoSe2, which form 1D metal channels embedded in the surrounding semiconductor. At low temperatures these 1D metallic states open a band gap at the Fermi level of 100 meV together with periodic beatings in the local density of states, both characteristic of charge density waves. In the second example, we suggest that the most abundant defect is an O-passivated Se-vacancy, instead of bare Se vacancy as commonly reported. This atomic defect forms an atomically confined Type I hetero junction with the surrounding pristine MoSe2 and lacks of any in-gap-states. The presence of in-gap-states will be decisive for the different optoelectronic and catalytic properties of the defect.
DescriptionResumen del trabajo presentado a la International conference on: Novel 2D materials explored via scanning probe microscopy & spectroscopy; celebrada en Donostia.San Sebastián (País Vasco, España) del 25 al 29 de junio de 2018.
URIhttp://hdl.handle.net/10261/179819
Appears in Collections:(CFM) Comunicaciones congresos

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