Por favor, use este identificador para citar o enlazar a este item:
http://hdl.handle.net/10261/178863
COMPARTIR / EXPORTAR:
SHARE BASE | |
Visualizar otros formatos: MARC | Dublin Core | RDF | ORE | MODS | METS | DIDL | DATACITE | |
Campo DC | Valor | Lengua/Idioma |
---|---|---|
dc.contributor.author | Fasolato, Claudia | es_ES |
dc.contributor.author | De Luca, Marta | es_ES |
dc.contributor.author | Djomani, Doriane | es_ES |
dc.contributor.author | Vincent, Laetitia | es_ES |
dc.contributor.author | Renard, Charles | es_ES |
dc.contributor.author | Di Iorio, Giulia | es_ES |
dc.contributor.author | Paillard, Vincent | es_ES |
dc.contributor.author | Amato, Michele | es_ES |
dc.contributor.author | Rurali, Riccardo | es_ES |
dc.contributor.author | Zardo, Ilaria | es_ES |
dc.date.accessioned | 2019-03-29T11:37:15Z | - |
dc.date.available | 2019-03-29T11:37:15Z | - |
dc.date.issued | 2018-11-14 | - |
dc.identifier.citation | Nano Letters 18 (11): 7075-7084 (2018) | es_ES |
dc.identifier.issn | 1530-6984 | - |
dc.identifier.uri | http://hdl.handle.net/10261/178863 | - |
dc.description.abstract | Semiconducting nanowires (NWs) offer the unprecedented opportunity to host different crystal phases in a nanostructure, which enables the formation of polytypic heterostructures where the material composition is unchanged. This characteristic boosts the potential of polytypic heterostructured NWs for optoelectronic and phononic applications. In this work, we investigate cubic Ge NWs where small (∼20 nm) hexagonal domains are formed due to a strain-induced phase transformation. By combining a nondestructive optical technique (Raman spectroscopy) with density-functional theory (DFT) calculations, we assess the phonon properties of hexagonal Ge, determine the crystal phase variations along the NW axis, and, quite remarkably, reconstruct the relative orientation of the two polytypes. Moreover, we provide information on the electronic band alignment of the heterostructure at points of the Brillouin zone different from the one (Γ) where the direct band gap recombination in hexagonal Ge takes place. We demonstrate the versatility of Raman spectroscopy and show that it can be used to determine the main crystalline, phononic, and electronic properties of the most challenging type of heterostructure (a polytypic, nanoscale heterostructure with constant material composition). The general procedure that we establish can be applied to several types of heterostructures. | es_ES |
dc.description.sponsorship | I.Z. acknowledges financial support from the Swiss National Science Foundation research grant (Project Grant No. 200021_165784). C.F. acknowledges financial support from Sapienza University scholarship “Borsa di Perfezionamento all’Estero 2017–2018”. R.R. acknowledges financial support by the Ministerio de Economia, Industria y Competitividad (MINECO) under grant FEDER-MAT2017-90024-P and the Severo Ochoa Centres of Excellence Program under Grant SEV-2015-0496 and by the Generalitat de Catalunya under grants no. 2017 SGR 1506. L.V. acknowledges financial support from the IDEX Paris-Saclay (ANR-11-IDEX-0003-02). This work was partly supported by the ANR HEXSIGE project (ANR-17-CE030-0014-01) of the French Agence Nationale de la Recherche. R.R. and M.A. thank Giacomo Giorgi and Thanayut Kaewmaraya for useful discussions. | es_ES |
dc.language.iso | eng | es_ES |
dc.publisher | American Chemical Society | es_ES |
dc.relation | info:eu-repo/grantAgreement/MINECO/Plan Estatal de Investigación Científica y Técnica y de Innovación 2013-2016/MAT2017-90024-P | es_ES |
dc.relation | info:eu-repo/grantAgreement/MINECO/Plan Estatal de Investigación Científica y Técnica y de Innovación 2013-2016/SEV-2015-0496 | es_ES |
dc.relation.isversionof | Postprint | es_ES |
dc.rights | openAccess | en_EN |
dc.subject | Allotrope | es_ES |
dc.subject | Electronic band alignment | es_ES |
dc.subject | Heterostructure | es_ES |
dc.subject | Nanowires | es_ES |
dc.subject | Phonons | es_ES |
dc.subject | Raman spectroscopy | es_ES |
dc.title | Crystalline, Phononic, and Electronic Properties of Heterostructured Polytypic Ge Nanowires by Raman Spectroscopy | es_ES |
dc.type | artículo | es_ES |
dc.description.peerreviewed | Peer reviewed | es_ES |
dc.relation.publisherversion | http://dx.doi.org/10.1021/acs.nanolett.8b03073 | es_ES |
dc.embargo.terms | 2019-11-14 | es_ES |
dc.contributor.funder | Swiss National Science Foundation | es_ES |
dc.contributor.funder | Sapienza Università di Roma | es_ES |
dc.contributor.funder | Ministerio de Economía y Competitividad (España) | es_ES |
dc.contributor.funder | Generalitat de Catalunya | es_ES |
dc.contributor.funder | Université Paris-Saclay | es_ES |
dc.contributor.funder | Agence Nationale de la Recherche (France) | es_ES |
dc.relation.csic | Sí | es_ES |
oprm.item.hasRevision | no ko 0 false | * |
dc.identifier.funder | http://dx.doi.org/10.13039/501100004271 | es_ES |
dc.identifier.funder | http://dx.doi.org/10.13039/501100007241 | es_ES |
dc.identifier.funder | http://dx.doi.org/10.13039/501100002809 | es_ES |
dc.identifier.funder | http://dx.doi.org/10.13039/501100003329 | es_ES |
dc.identifier.funder | http://dx.doi.org/10.13039/501100001665 | es_ES |
dc.type.coar | http://purl.org/coar/resource_type/c_6501 | es_ES |
item.openairetype | artículo | - |
item.grantfulltext | open | - |
item.cerifentitytype | Publications | - |
item.openairecristype | http://purl.org/coar/resource_type/c_18cf | - |
item.fulltext | With Fulltext | - |
item.languageiso639-1 | en | - |
Aparece en las colecciones: | (ICMAB) Artículos |
Ficheros en este ítem:
Fichero | Descripción | Tamaño | Formato | |
---|---|---|---|---|
Fasolato_NanoLett_2018_postprint.pdf | 951,09 kB | Adobe PDF | Visualizar/Abrir |
CORE Recommender
Page view(s)
232
checked on 23-abr-2024
Download(s)
158
checked on 23-abr-2024
Google ScholarTM
Check
NOTA: Los ítems de Digital.CSIC están protegidos por copyright, con todos los derechos reservados, a menos que se indique lo contrario.