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Título

Investigation of the origin of deep levels in CdTe doped with Bi

AutorSaucedo, E.; Franc, J.; Elhadidy, H.; Horodysky, P.; Ruiz, C. M.; Bermúdez, V.; Sochinskii, N. V.
Palabras claveBismuth
Cadmium compounds
Deep levels
Defect states
Doping profiles
II-VI semiconductors
Impurity states
Lattice constants
Photoluminescence
Semiconductor doping
Thermoelectricity
X-ray diffraction
Fecha de publicación1-may-2008
EditorAmerican Institute of Physics
CitaciónJournal of Applied Physics 103, 094901 (2008)
ResumenCombining optical (low temperature photoluminescence), electrical (thermoelectric effect spectroscopy), and structural (synchrotron X-ray powder diffraction) methods, the defect structure of CdTe doped with Bi was studied in crystals with dopant concentration in the range of 1017–1019 at./cm3. The semi-insulating state observed in crystals with low Bi concentration is assigned to the formation of a shallow donor level and a deep donor recombination center. Studying the evolution of lattice parameter with temperature, we postulate that the deep center is formed by a Te–Te dimer and their formation is explained by a tetrahedral to octahedral distortion, due to the introduction of Bi in the CdTe lattice. We also shows that this model agrees with the electrical, optical, and transport charge properties of the samples.
Versión del editorhttp://link.aip.org
http://dx.doi.org/10.1063/1.2903512
URIhttp://hdl.handle.net/10261/17879
DOI10.1063/1.2903512
ISSN0021-8979
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