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dc.contributor.authorSklyadneva, Irina Yu.es_ES
dc.contributor.authorHeid, Rolfes_ES
dc.contributor.authorBohnen, Klaus-Peteres_ES
dc.contributor.authorChulkov, Eugene V.es_ES
dc.date.accessioned2019-03-20T13:27:26Z-
dc.date.available2019-03-20T13:27:26Z-
dc.date.issued2018-
dc.identifier.citationSurface Science 678: 86-90 (2018)es_ES
dc.identifier.issn0039-6028-
dc.identifier.urihttp://hdl.handle.net/10261/178203-
dc.description.abstractWe report a study of the electron–phonon contribution to the linewidth of quantum-well states in a surface superstructure formed by a 4/3-monolayer of Pb on Si(111), a dense phase with a √3 ×√3 unit cell. Ab initio calculations based on the density-functional theory were carried out using a linear response approach in the mixed-basis pseudopotential representation. The phonon-induced contribution to the lifetime broadening is analyzed for both excited electrons and holes. The phonon contribution is found to be generally very sensitive to the energy position of the excited electron (hole) except for unoccupied Pb electronic states inside the Si band gap where the phonon-induced linewidth varies smoothly around  ∼ 13 meV irrespective of electron energy. This differs for occupied Pb electronic states, which exhibit larger linewidths, or shorter lifetimes, because numerous phonon-mediated transitions to Si electronic bands substantially increase the electron–phonon coupling.es_ES
dc.description.sponsorshipThis work has been supported by University of the Basque Country (grants nos. GIC07IT36607 and IT-756-13), the Spanish Ministry of Science and Innovation (grants nos. FIS2013-48286-C02-02-P, FIS2013-48286-C02-01-P, and FIS2016-75862-P), the Tomsk State University Academic D.I. Mendeleev Fund Program (grant no. 8.1.05.2015) and Saint Petersburg State University (project 15.61.202.2015).es_ES
dc.language.isoenges_ES
dc.publisherElsevieres_ES
dc.relationMINECO/ICTI2013-2016/FIS2013-48286-C02-02-Pes_ES
dc.relationMINECO/ICTI2013-2016/FIS2013-48286-C02-01-Pes_ES
dc.relationMINECO/ICTI2013-2016/FIS2016-75862-Pes_ES
dc.rightsclosedAccesses_ES
dc.subjectLead overlayer on Si(111)es_ES
dc.subjectQuantum-well stateses_ES
dc.subjectLifetimees_ES
dc.subjectElectron–phonon couplinges_ES
dc.titlePhonon-induced linewidth of quantum-well states in monolayer Pb on Si(111)es_ES
dc.typeartículoes_ES
dc.identifier.doi10.1016/j.susc.2018.01.012-
dc.description.peerreviewedPeer reviewedes_ES
dc.relation.publisherversionhttps://doi.org/10.1016/j.susc.2018.01.012es_ES
dc.contributor.funderUniversidad del País Vascoes_ES
dc.contributor.funderMinisterio de Ciencia e Innovación (España)es_ES
dc.contributor.funderTomsk State Universityes_ES
dc.contributor.funderSaint Petersburg State Universityes_ES
dc.contributor.funderMinisterio de Economía y Competitividad (España)es_ES
dc.relation.csices_ES
oprm.item.hasRevisionno ko 0 false*
dc.identifier.funderhttp://dx.doi.org/10.13039/501100008566es_ES
dc.identifier.funderhttp://dx.doi.org/10.13039/501100004285es_ES
dc.identifier.funderhttp://dx.doi.org/10.13039/501100003329es_ES
dc.identifier.funderhttp://dx.doi.org/10.13039/501100004837es_ES
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