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dc.contributor.author | Raebiger, Hannes | - |
dc.contributor.author | Bae, Soungmin | - |
dc.contributor.author | Echeverría-Arrondo, C. | - |
dc.contributor.author | Ayuela, Andrés | - |
dc.date.accessioned | 2019-03-12T13:46:58Z | - |
dc.date.available | 2019-03-12T13:46:58Z | - |
dc.date.issued | 2018 | - |
dc.identifier | doi: 10.1103/PhysRevMaterials.2.024402 | - |
dc.identifier | e-issn: 2475-9953 | - |
dc.identifier.citation | Physical Review Materials 2(2): 024402 (2018) | - |
dc.identifier.uri | http://hdl.handle.net/10261/177784 | - |
dc.description.abstract | Mn and Fe-doped GaN are widely studied prototype systems for hole-mediated magnetic semiconductors. The nature of the hole states around the Mn and Fe impurities, however, remains under debate. Our self-interaction corrected density-functional calculations show that the charge neutral Mn0 and positively charged Fe+ impurities have symmetry-broken d5+h ground states, in which the hole is trapped by one of the surrounding N atoms in a small polaron state. We further show that both systems also have a variety of other d5+h configurations, including symmetric, delocalized states, which may be stabilized by axial strain. This finding opens a pathway to promote long-range hole-mediated magnetic interactions by strain engineering and clarifies why highly strained thin-films samples often exhibit anomalous magnetic properties. | - |
dc.description.sponsorship | This work was funded by JSPS Grant-in-Aid for Scientific Research (C) No. 17K05494. H.R. is grateful to the São Paulo Research Foundation FAPESP and S.B. thanks the Rotary Yoneyama Memorial Foundation for support. A.A. acknowledges support of the Project FIS2016-76617-P of the Spanish Ministry of Economy and Competitiveness MINECO. | - |
dc.publisher | American Physical Society | - |
dc.relation | info:eu-repo/grantAgreement/MINECO/Plan Estatal de Investigación Científica y Técnica y de Innovación 2013-2016/FIS2016-76617-P | - |
dc.relation.isversionof | Publisher's version | - |
dc.rights | openAccess | - |
dc.title | Control of hole localization in magnetic semiconductors by axial strain | - |
dc.type | artículo | - |
dc.identifier.doi | 10.1103/PhysRevMaterials.2.024402 | - |
dc.relation.publisherversion | https://doi.org/10.1103/PhysRevMaterials.2.024402 | - |
dc.date.updated | 2019-03-12T13:46:58Z | - |
dc.description.version | Peer Reviewed | - |
dc.language.rfc3066 | eng | - |
dc.rights.license | https://creativecommons.org/licenses/by/4.0/ | - |
dc.contributor.funder | Japan Society for the Promotion of Science | - |
dc.contributor.funder | Fundação de Amparo à Pesquisa do Estado de São Paulo | - |
dc.contributor.funder | Rotary Foundation | - |
dc.contributor.funder | Ministerio de Economía y Competitividad (España) | - |
dc.relation.csic | Sí | - |
dc.identifier.funder | http://dx.doi.org/10.13039/501100003329 | es_ES |
dc.identifier.funder | http://dx.doi.org/10.13039/100004460 | es_ES |
dc.identifier.funder | http://dx.doi.org/10.13039/501100001691 | es_ES |
dc.identifier.funder | http://dx.doi.org/10.13039/501100001807 | es_ES |
dc.type.coar | http://purl.org/coar/resource_type/c_6501 | es_ES |
item.openairetype | artículo | - |
item.cerifentitytype | Publications | - |
item.grantfulltext | open | - |
item.openairecristype | http://purl.org/coar/resource_type/c_18cf | - |
item.fulltext | With Fulltext | - |
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holeaxial.pdf | 1,22 MB | Adobe PDF | Visualizar/Abrir |
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